Effect of growth condition on the electrical behavior of BiFeO₃/Si thin film devices

Abstract

BiFeO₃ thin films were deposited onto single crystalline Si (100) substrate using Pulsed Laser Deposition technique. The effect of different oxygen partial pressure on the BiFeO₃ film growth, structural and transport properties has been investigated. Structural characterization shows that film growth under lower partial pressure exhibits a minor impurity phase which gets suppressed under higher oxygen partial pressure (OP₂). The effect of OP₂ during the deposition on the leakage current and the role of oxygen vacancies have been understood in the context of various charge transport mechanism. RBS study confirms the presence of oxygen content in the film studied which are responsible for the modification in the Electrical behavior of BFO/Si thin film devices.

Keywords:

• Pulsed laser deposition (PLD)
• BiFeO₃ (BFO)
• Oxygen partial pressure (OP₂)
• Ferroelectricity

Acknowledgments

We thank Dr Mukul Gupta and Dr V.R. Reddy UGC-DAE CSR, Indore for providing characterization facility. We also thank IUAC, New Delhi for providing RBS facility.

Additional information

Funding

ABR is thankful to IUAC New Delhi for UFR-65319 and UGC-DAE, CSR, Indore for CSR-IC-ISUM-64/CRS-347/2020-21/949 Project funding.