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Research Article

Dominant role of in defect on carrier distribution and photocatalytic activity for BiVO4

, , , , , & show all
Pages 377-385 | Received 15 Jun 2023, Accepted 05 Aug 2023, Published online: 28 Nov 2023
 

Abstract

The bismuth vanadate samples (In-BiVO4) have been synthesized through sol-gel method. The typical XRD patterns of samples have revealed that the doped In ions could enter the lattice of BiVO4. The results indicate that doped In ions improve the photocatalytic properties of the BiVO4 for the degradation of methyl orange. The as-prepared In doped BiVO4 photocatalysts exhibit strong visible light absorption capacity than that of bare crystalline BiVO4. Density functional theory calculations show that doped indium ions can effectively promote the separation of photogenerated holes.

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

The authors gratefully acknowledge financial supports from the Ecological and Environmental Protection Research Project of Heilongjiang Province (HST2022S010), Key Research Projects of University in Henan Province (22B430021), Nature Scientific Foundation of Heilongjiang Province (ZD2023E005) and Natural Science Foundation of Shandong Province (ZR2021LSW014).

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