ABSTRACT
The short channel effects are improved in GC-JL-GAA MOSFETs by raising the channel’s graded doping level. The noise and linearity of the device plays a crucial role in RFIC circuit applications. Therefore, this article presents a comprehensive analysis of noise and linearity parameters of graded channel junction-less-gate-all-around (GC-JL-GAA) MOSFET with process parameter variations through 3D Silvaco ATLAS device simulator. This paper investigates the noise parameters such as Noise Conductance (NC), minimum noise figure (NFmin), and optimum source impedance (Z0). To comprehend the performance of GC-JL-GAA MOSFETs, the noise characteristics with changes in channel thickness, channel length, high-k gate oxide, and oxide thickness are examined and compared. Moreover, the effect of process parameter variation on linearity FOMs such as gm2, gm3, IIP3, IMD3, VIP2, VIP3, and 1-db compression point are also examined. The GC-JL-GAA device, however, provides improved noise and linearity performance parameters for lower channel length of the device as per the performance evaluation. Furthermore, it has been observed that high-k gate oxide deteriorates noise and linearity performance of GC-JL-GAA MOSFETs. Based on the results of the performance evaluation, it has been revealed that the GC-JL-GAA devices are suitable to be employed in Radio Frequency (RF) applications.
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Author contribution
All authors have made substantial contributions to the conception and design, or acquisition of data, or analysis and interpretation of data. Authors Vidyadhar Gupta, Amit Kumar Pandey, and Abhinav Gupta have been involved in drafting the manuscript. Vedvrat and Tarun Kumar Gupta have involved in revising the content of manuscript and have given final approval of the version to be published. Each author has participated sufficiently in the work to take public responsibility for appropriate portions of the content. All authors read and approved the final manuscript.
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The authors declare that all procedures followed were in accordance with the ethical standards.
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