Analysis and simulation of asymmetrical nanoscale self-switching transistor

ABSTRACT

In this paper, we present a computational study on the electrical behaviour of self-switching transistors (SSTs) based on InGaAs/InP heterojunction. Our simulation is based on the solution of Poisson and Schrodinger equations self-consistently by using Finite Element Method (FEM). By using this method, electrical characteristics of device, such as $I_{ON}/I_{OFF}$ ratio, subthreshold swing, and intrinsic gate-delay time are investigated. Also, the effects of geometrical variations on the electrical parameters of SSTs are simulated. We show that appropriate design of the device allows current modulation exceeding ${10}^5$ at room temperature.

KEYWORDS:

• Self-switching transistor
• transistor simulation
• Schrodinger equation

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

Ashkan Horri

Ashkan Horri received his BS degree from Arak Azad University in 2010 and the MS and PhD degrees from Islamic azad university, science and research branch in 2012 and 2016; respectively. He joined Islamic Azad University of arak, and he is currently an Associate professor. His research interests include design and simulation of advanced semiconductor nano and quantum devices.

Rahim Faez

Rahim Faez received his BS degree from Sharif University of Technology in 1977 and the MS and PhD degrees from UCLA in 1979 and 1985; respectively. He joined Sharif University of Technology and he is currently an Associate professor. His research interests include design and simulation of advanced semiconductor nano and quantum devices.