93
Views
0
CrossRef citations to date
0
Altmetric
Research Articles

Analysis and simulation of asymmetrical nanoscale self-switching transistor

&
Pages 775-781 | Received 17 Apr 2021, Accepted 23 Aug 2021, Published online: 06 Sep 2021

References

  • Song AM, Missous M, Omling P, et al. Unidirectional electron flow in a nanometer-scale semiconductor channel: aself-switching device. Appl Phys Lett. 2003;83(9):1881–1883.
  • Farhi G, Saracco E, Beerens J, et al. Electrical characteristics and simulations of self-switching-diodes in SOI technology. Solid State Electron. 2007;51(9):1245–1249.
  • Irshaid MY, Balocco C, Luo Y, et al. Zinc-oxide-based planar nanodiodes operating at 50 MHz. Appl Phys Lett. 2011;99(9): 092101–3. DOI:https://doi.org/10.1063/1.3629995
  • Kettle J, Perks RM, Holye RT. Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electron Lett. 2009;45(1):79–81.
  • Al-Dirini F, Hossain FM, Nirmalathas A, et al. Asymmetrically-gated graphene self-switching diodes as negative differential resistance devices. Nanoscale. 2014;6(13):7628–7634.
  • Horri A, Faez R. Full-quantum simulation of graphene self-switching diodes. Chin Phys Lett. 2019;36(6): 067202–4.
  • Al-Dirini F, Hossain FM, Mohammed MA, et al. Highly effective conductance modulation in planar silicene field effect devices due to buckling. Sci Rep. 2015;5(1):1–10.
  • Cortes-Mestizo IE, Briones E, Briones J, et al. Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications. Jpn J Appl Phys. 2016;55(1): 014304–7. DOI:https://doi.org/10.7567/JJAP.55.014304
  • International Technology Roadmap for Semiconductors (ITRS). Available from http://www.itrs.net/
  • Aberg M, Saijets J, Song A, et al. Simulation and modeling of self-switching devices. Phys Scr. 2004;114(1):123–126.
  • Komatsuzaki Y, Kyougoku T, Saba K, et al. Electrical characteristics of in-plane gate logic devices. Phys Status Solidi C. 2012;9(2):385–388.
  • Song AM, Missous M. Nanometer-scale two-terminal semiconductor memory operating at room temperature. Appl Phys Lett. 2005;86(4): 042106–3.
  • Mateos J, Song AM, Vasallo BG, et al. THz operation of self-switching nano-diodes and nano-transistors. PROC SPIE; Spain; 2005. p. 123–126.
  • Siegfried S. Analysis and simulation of semiconductor devices. Wien, Austria: Springer-Verlag Wien; 1984.
  • Guo J, Datta S, Lundstrom M, et al. Toward multiscale modeling of carbon nanotube transistors. Int J Multiscale Comput Eng. 2004;2(2):1–21.
  • Dorkel JM, Leturcq PH. Carrier mobilites in silicon semi-empirically related to temperature doping and injection level. Solid State Electron. 1981;24(9):821–825.
  • McPherson JW, Mogul HC. Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films. J Appl Phys. 1998;84(3):1513–1523.
  • Horri A, Faez R, Pourfath M, et al. Modeling of a vertical tunneling transistor based on graphene–MoS2 heterostructure. IEEE Trans Electron Dev. 2017;64(8):3459–3465.
  • Horri A, Faez R, Pourfath M, et al. A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure. J Appl Phys. 2017;121(21):214503–214508.
  • Liu M, Lentz F, Trellenkamp S, et al. Diameter scaling of Vertical Ge Gate-All-Around Nanowire pMOSFETs. IEEE Trans Electron Dev. 2020;67(7):2988–2994.
  • Mahdi M, Hossain MA, Hussain S, et al. Effect of doping profile variation on nanoscale cylindrical gate carbon nanotube field-effect transistor: a computational study using nonequilibrium Green’s function formalism. Semicond Sci Tech. 2020;36(1):015012.
  • Manikandan S, Balamurugan NB, Samuel TSA. Impact of uniform and non-uniform doping variations for ultrathin body junctionless FinFETs. Mat Sci Semicon Proc. 2019;104(1):104653.
  • Liang G, Neophytou N, Lundstrom MS, et al. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: a full real-space quantum transport simulation. J Appl Phys. 2007;102(5): 054307–7. DOI:https://doi.org/10.1063/1.2775917

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.