The high‐speed measurement of a partial area imaging system applied to photoresist development processing

Chern‐Sheng Lin Department of Automatic Control Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C. Phone: 886–4–24517250 ext. 3929 Fax: 886–4–24517250 ext. 3929 E-mail: [email protected])

Yun‐Long Lay Department of Electronic Engineering, Natinoal Chin‐Yi Institute of Technology, Taichung, Taiwan 411, R.O.C.

Shi‐Xiang Chan Department of Automatic Control Engineering, Feng Chia University, Taichung, Taiwan 407, R.O.C.

Chien‐Wa Ho Department of Electro‐Optical Engineering, National United University, Miaoli, Taiwan 360, R.O.C.

Yih‐Chih Chiou Department of Mechanical Engineering and Institute of Aeronautics and Astronautics, Chung Hua University, Hsinchu, Taiwan 300, R.O.C.

Abstract

Among the parameters that affect photolithography, the most important are exposure and development time which affect the coating photoresist characteristics. This study further researches the relationship between the exposure and development time using a high speed image inspection system, and the relationship between the development time and photoresist depth using a Scanning Probe Microscope (SPM). A partial scan CCD camera and high speed frame capture card were used to obtain the photoresist development processing parameters. The experimental results verified that this imaging system provides an economical and effective method for producing a micro‐photo‐etched product. It is expected that these experiments can also offer some good references useful in the micro electro mechanical industrial field.

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Corresponding author. (Tel: 886–4–24517250 ext. 3929; Fax: 886–4–24519951; Email: [email protected])

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The high‐speed measurement of a partial area imaging system applied to photoresist development processing

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The high‐speed measurement of a partial area imaging system applied to photoresist development processing

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