Performance Improvement of Pi-gate SOI MOSFET Transistor using High-k Dielectric with Metal Gate

ABSTRACT

Pi-gate silicon-on insulator (SOI) MOSFET transistors have emerged as novel devices due to its simple architecture and better performance, better control over short-channel effects, and reduced power dissipation due to reduced gate leakage currents. As the oxide thickness scales below 2 nm, leakage currents due to tunnelling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO₂ gate oxide with a high-k material allows increased gate capacitance without the associated leakage effects. In this paper, we present the results of a 3D numerical simulation of the Pi-gate SOI MOSFET transistor. 3D device structure, based on the technology SOI is described and simulated by using SILVACO TCAD tools, and we compare the electrical characteristics results for titanium nitride (TiN) fabricated on Al₂O₃ (k ∼ 9), HfO₂ (k ∼ 20), and La₂O₃ (k ∼ 30) gate dielectric. Excellent dielectric properties such as high-k constant, low leakage current, threshold voltage, and electrical characteristics were demonstrated. From the simulation result, it was shown that HfO₂ is the best dielectric material with metal gate TiN.

Keywords:

• High-k dielectric
• multi-gate SOI MOSFET
• Pi-gate SOI MOSFET
• short-channel effects (SCEs)
• Silvaco software
• technology SOI

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Notes on contributors

Fatima Zohra Rahou

Fatima Zohra Rahou, PhD student, was born in Tlemcen, Algeria in 1979. She received Magister degree in microelectronic from Tlemcen University in 2010. She is with the Department of Electronic and Electrical Engineering, faculty of Technology in University of Abou Bekr Belkaïd, Tlemcen, Algeria and also a research member of Materials and Renewable Energy Research Unit (URMER)

E-mail: [email protected]

A. Guen Bouazza

A. Guen Bouazza is an associate professor in Abou Bekr Belkaïd University, Tlemcen, faculty of Technology Department of Electronic and Electrical Engineering.

E-mail: [email protected]

B. Bouazza

B. Bouazza is an associate professor in Abou Bekr Belkaïd University, Tlemcen, faculty of Technology Department of Electronic and Electrical Engineering.

E-mail: [email protected]