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Abstract
In this paper, small-signal model parameters and RF characteristics of the GaN-based Dual-Metal Cylindrical Surrounding Gate-Junctionless Accumulation Mode (DM-CSG-JAM) MOSFET has been extracted. Better scattering parameters has been observed for GaN-based DM-CSG-JAM MOSFET over other analogous structures which confirms its applications for RF domain. Also, enhanced drain current, transconductance, cut-off frequency, Ion/Ioff ratio, etc. have been observed for the GaN-based device. The performance of the GaN-based MOSFET has also been compared with the other compound semiconductors (GaAs, InP) and silicon-based DM-CSG-JAM MOSFET. On account of the eminent properties possessed by GaN, the GaN-based device shows outstanding characteristics over the other semiconductor-based device.
STATEMENTS AND DECLARATIONS
Acknowledgements
Authors are thankful to the Director, Maharaja Agrasen Institute of Technology (MAIT), Delhi, for allotting the needed facilities to accomplish the work.
Disclosure statement
No potential conflict of interest was reported by the author(s).
Additional information
Notes on contributors
Sumedha Gupta
Sumedha Gupta is currently pursuing the PhD degree from Delhi Technological University, Delhi, India. She is also an assistant professor with the ECE Department, Maharaja Agarsen Institute of Technology. Her research area includes VLSI design and modelling of microelectronic devices.
Neeta Pandey
Neeta Pandey received the ME degree in microelectronics from the Birla Institute of Technology and Sciences, Pilani, India, and the PhD degree from Guru Gobind Singh Indraprastha University, New Delhi, India. She is currently an associate professor with the ECE Department, Delhi Technological University, New Delhi. She has authored more than 150 technical papers in reputed national and international conferences and journals. Her current research interests include analog and digital VLSI design. She is also a senior member of IEEE and life member of ISTE. Email id: [email protected]
R.S. Gupta
R S Gupta received the PhD degree from IIT-BHU, Varanasi, India, in 1970. He is currently a professor with the ECE Department, Maharaja Agrasen Institute of Technology, New Delhi, India. He has authored or co-authored more than 650 papers in various international journals and international and national conference of repute, and has guided more than 60 PhD students. His current research area includes solid state electronics devices, VLSI design and modeling of microelectronic devices. He is also senior life member of IEEE and member of Institute of Electronics and Telecommunication Engineering. Email id: [email protected]