Abstract
An improved ultra-wideband metamaterial absorber (MA) with high absorptivity in the infrared region is proposed. It features a mixture of copper and GaAs at the top layer, which can greatly raise the bandwidth and absorption rate due to the coupling effect between copper and GaAs. The spectrum with absorption rate of 90% in the infrared region from 98 to 152 THz can be obtained. The input-impedance matching theory, as well as surface current distributions and power loss density have been investigated to analyze the absorption mechanism of the perfect absorption performance. In addition, the MA is insensitive to polarization and incident angle. This work may provide a further step in the development of ultra-broadband devices, such as filters, sensors and energy harvesting and stealth devices.
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Jiufu Ruan
Jiufu Ruan received Ph.D. degree from Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, China, in 2010. Currently, he is an Associate Professor at Hefei Universtiy of Technology, Hefei, China. His main research interests include the devices, systems and applications of microwave and terahertz wave.
Shengwei Ji
Shengwei Ji received the B.S. degree from Qingdao University, Qingdao, China, in 2018. He is currently a graduate student at Hefei University of Technology, Hefei, China. His research interests include terahertz metamaterial devices.
Zhi Tao
Zhi Tao received the B.S. degree from Hefei University of Technology, Xuancheng, China, in 2018. He is currently a graduate student at Hefei University of Technology, Hefei, China. His main research interest is microwave and terahertz devices.
Feng Lan
Feng Lan received the B.S. degree from Anhui University of Science and Technology, Huainan, China, in 2019. She is currently a graduate student at Hefei University of Technology, Hefei, China. Her research interests include terahertz metamaterial devices.