Abstract
A secondary ion mass spectrometry (SIMS) and a neutral molecule mass spectrometry (NMMS) study of deuterium trapping in a single crystalline silicon as a result of ion irradiation at fluences 1016--1018 cm-2 are presented. An attempt has been made to observe the formation and evolution of defect profiles containing one or two deuterium atoms (SiD- and SiD2-complexes). The proposed model of radiation-induced sequential reactions describes satisfactorily the accumulation of SiD- and SiD2-complexes and the reemission of D2-molecules.