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Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
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Original Articles

MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr2(Ta1−x,Nbx)2O7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment

ICHIROU TAKAHASHI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
HIROYUKI SAKURAI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
TATSUFUMI ISOGAI Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
KIYOSHI FUNAIWA New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
MASAKI HIRAYAMA New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
AKINOBU TERAMOTO New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
SHIGETOSHI SUGAWA Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
&
TADAHIRO OHMI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
 show all
Pages 29-38 | Received 01 Apr 2004, Accepted 01 May 2004, Published online: 11 Aug 2010
 
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Abstract

A low dielectric constant ferroelectric Sr2(Ta1 −x,Nbx)2O7 film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and microwave-excited (2.45 GHz) high-density (> 1012 cm−3) low electron temperature (< 1 eV) Kr/O2 plasma (oxygen radical treatment). Oxygen radical treatment can oxidize STN effectively at 400°C. Furthermore, we have successfully developed a new technology that crystallizes a ferroelectric material on an insulator layer such as SiO2 and Si3N4 directly by oxygen radical treatment. Using this technology, MFIS device operation has been successfully achieved and its retention time is more than 24 hours.

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