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Integrated Ferroelectrics
An International Journal
Volume 81, 2006 - Issue 1
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SECTION I: FeRAM PROCESSING

LOW VOLTAGE 3 V OPERATION OF FERROELECTRIC MULTI-LAYER STACK MFIS STRUCTURE DEVICE FORMED BY PLASMA PHYSICAL VAPOR DEPOSITION AND OXYGEN RADICAL TREATMENT

ICHIROU TAKAHASHI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
,
HIROYUKI SAKURAI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
,
TATSUFUMI ISOGAI Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
,
AKINOBU TERAMOTO New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
,
SHIGETOSHI SUGAWA Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
&
TADAHIRO OHMI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Pages 47-55 | Received 17 Apr 2005, Accepted 23 Jan 2006, Published online: 17 Aug 2006
 
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ABSTRACT

We have successfully developed a technology that crystallizes a thin ferroelectric film on an insulator such as SiO2 directly. A very thin (100 nm) and low dielectric constant ferroelectric Sr2(Ta1−x,Nbx)2O7 (STN, x = 0.3) film with high ferroelectric performance has been formed on SiO2 by repeating the 5 nm STN deposition and oxygen radical treatment 20 times. Using this technology, 3 V operation of the ferroelectric multi-layer stack MFIS (FMLS-MFIS) structure device has been successfully achieved and 0.4 V memory window of the C-V hysteresis curve is obtained. More than 3 days retention time can be obtained under 3 V operation.

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