LOW VOLTAGE 3 V OPERATION OF FERROELECTRIC MULTI-LAYER STACK MFIS STRUCTURE DEVICE FORMED BY PLASMA PHYSICAL VAPOR DEPOSITION AND OXYGEN RADICAL TREATMENT

ICHIROU TAKAHASHI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

HIROYUKI SAKURAI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

TATSUFUMI ISOGAI Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

AKINOBU TERAMOTO New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

SHIGETOSHI SUGAWA Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

TADAHIRO OHMI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

REFERENCES

Fujimori , Y. , Nakamura , T. and Kamisawa , A. 1999 . Jpn. J. Appl. Phys. , 38 : 2285 [CSA]
Web of Science ®Google Scholar
Takahashi , I. , Sakurai , H. , Yamada , A. , Funaiwa , K. , Hirai , K. , Urabe , S. , Goto , T. , Hirayama , M. , Teramoto , A. , Sugawa , S. and Oohi , T. 2003 . Jpn. J. Appl. Phys. , 42 : 2050 [CSA]
Web of Science ®Google Scholar
Noda , M. , Kodama , M. K. , Ikeuchi , I. , Takahashi , M. and Okuyama , M. 2003 . Jpn. J. Appl. Phys. , 42 : 2055 [CSA]
Web of Science ®Google Scholar
Takahashi , I. , Sakurai , H. , Isogai , T. , Funaiwa , K. , Hirayama , M. , Teramoto , A. , Sugawa , S. and Ohmi , T. 2004 . Journal of Integrated Ferroelectric , 65 : 29 [CSA] [CROSSREF]
Web of Science ®Google Scholar
Sakurai , H. , Takahashi , I. , Isogai , T. , Funaiwa , K. , Tsunoda , T. , Goto , T. , Hirayama , M. , Treramoto , A. , Sugawa , S. and Ohmi , T. International Conference on Solid State Divice and Materials . pp. 640
Google Scholar

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

LOW VOLTAGE 3 V OPERATION OF FERROELECTRIC MULTI-LAYER STACK MFIS STRUCTURE DEVICE FORMED BY PLASMA PHYSICAL VAPOR DEPOSITION AND OXYGEN RADICAL TREATMENT

REFERENCES

Information for

Open access

Opportunities

Help and information

Your download is now in progress and you may close this window

Login or register to access this feature

LOW VOLTAGE 3 V OPERATION OF FERROELECTRIC MULTI-LAYER STACK MFIS STRUCTURE DEVICE FORMED BY PLASMA PHYSICAL VAPOR DEPOSITION AND OXYGEN RADICAL TREATMENT

REFERENCES

Reprints and Corporate Permissions

Academic Permissions

Related research

To cite this article:

Download citation

Information for

Open access

Opportunities

Help and information

Keep up to date