How to analyse relaxation and leakage currents of dielectric thin films: Simulation of voltage-step and voltage-ramp techniques

Abstract

An empirical electrical equivalent circuit for dielectric thin films, based on experimental data, is developed. Current responses to voltage-steps and to voltage-ramps are calculated and compared with experimental data. The simulation allows us to separate current contributions of different physical processes while the experiment only reveals the sum of the currents.

Keywords:

• Thin films
• titanate
• dielectric relaxation
• leakage current
• impedance spectroscopy