Characterization of ferroelectric gate Mos capacitors formed by mod technique for nonvolatile memory applications

K. Arita Electronics Research Laboratory, Matsushita Electronics Corporation, 1–1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

S. Hayashi Electronics Research Laboratory, Matsushita Electronics Corporation, 1–1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

T. Otsuki Electronics Research Laboratory, Matsushita Electronics Corporation, 1–1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

Z. Chen Department of Electrical and Computer Engineering, University of Colorado, 1420 Austin Bluffs Parkway, Colorado Springs, CO, 80933–7150, USA

M. Lim Symetrix Corporation, 5055 Mark Dabling Boulevard, Colorado Springs, CO, 80918–3862, USA

J. W. Bacon Symetrix Corporation, 5055 Mark Dabling Boulevard, Colorado Springs, CO, 80918–3862, USA

C. A. Paz de Araujo Electronics Research Laboratory, Matsushita Electronics Corporation, 1–1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

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