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Philosophical Magazine Volume 96, 2016 - Issue 3
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Part A: Materials Science

A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE

M. GunesEngineering and Natural Sciences Faculty, Department of Materials Engineering, Adana Science and Technology University, Adana, TurkeyCorrespondence[email protected]
,
O. ErkenFaculty Science and Letters, Department of Physics, Adiyaman University, Adiyaman, Turkey
,
C. GumusPhysics Department, Cukurova University, Adana, Turkey
,
E. YalazEngineering and Natural Sciences Faculty, Department of Materials Engineering, Adana Science and Technology University, Adana, Turkey
,
E. PesenEngineering and Natural Sciences Faculty, Department of Materials Engineering, Adana Science and Technology University, Adana, Turkey
,
M. O. UkelgeEngineering and Natural Sciences Faculty, Department of Materials Engineering, Adana Science and Technology University, Adana, Turkey
,
B. ArpapayFaculty of Sciences, Nanoboyut Research Laboratory, Department of Physics, Anadolu University, Eskişehir, Turkey
,
U. SerincanFaculty of Sciences, Nanoboyut Research Laboratory, Department of Physics, Anadolu University, Eskişehir, Turkey
,
M. Taykurt DadayEngineering and Natural Sciences Faculty, Department of Materials Engineering, Adana Science and Technology University, Adana, Turkey
,
Y. Galvão GobatoDepartamento de Física, Universidade Federal de São Carlos, São Paulo, Brazil
&
M. HeniniSchool of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham, UK
 show all
Pages 223-229 | Received 20 Aug 2015, Accepted 16 Nov 2015, Published online: 31 Dec 2015
 
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Abstract

Optical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral photoluminescence (PL) measurement was performed at temperatures between 15 and 300 K. The PL measurements showed that band gap of the alloy decreases with increasing lattice temperature regardless the growth orientations. S-shaped temperature dependence has been observed in the samples grown on (1 0 0), (3 1 1)B, (4 1 1)B orientations. PL emission energy is fitted with Varshni and Bose–Einstein Approximation to determine Debye temperature (β), (ΘE) and thermal expansion coefficient (α), the exciton–phonon coupling strength (aB).

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