M. Gunes, O. Erken, C. Gumus, E. Yalaz, E. Pesen, M. O. Ukelge, B. Arpapay, U. Serincan, M. Taykurt Daday, Y. Galvão Gobato and M. Henini (2015) A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE, Philosophical Magazine, http://dx.doi.org/10.1080/14786435.2015.1122244
When the above article was first published online the text contained the errors listed below. These errors have now been corrected in both the online and print versions
In the Experimental details section on page 2, the last sentence read:
The samples are coded as C123-I, C123-II, C 123-III, C123-IV for Mn-free samples grown on (1 0 0), (1 1 0), (3 1 1)B and (4 1 1)B orientations, respectively, while C129-I, C129-II, C129-III, C129-IV for Mn-containing AlAs/GaMnAs QW structure grown on (0 0 1), (1 0 0), (3 1 1)B and (4 1 1)B, respectively.
The last 2 lines have been corrected as follows:
IV for Mn-containing AlAs/GaMnAs QW structure grown on (1 0 0), (1 1 0), (3 1 1)B and (4 1 1)B, respectively.
Reference [4] was listed as
[4] R. Moriya and H. Munekata, J. Appl. Phys. 93 (2003) pp. 4603; H. Munekata, H. Ohno, S. von Molnar, A. Segmuller, L. L. Chang, and L. Esaki, Diluted magnetic III-V semiconductors, Phys. Rev. Lett. 63 (1989), pp. 1849-1852.
The reference has been corrected as follows:
[4] H. Munekata, H. Ohno, S. von Molnar, A. Segmuller, L. L. Chang, and L. Esaki, Diluted magnetic III-V semiconductors, Phys. Rev. Lett. 63 (1989), pp. 1849-1852.
The growth planes in the figure captions for Figures 1, 2,3 and 4 were listed as: (0 0 1), (1 0 0), (3 1 1)B and (4 1 1)B in error. The growth planes have been corrected as follows: (1 0 0), (1 1 0), (3 1 1)B and (4 1 1)B.
Taylor & Francis apologises for these errors.