Synthesis and Characterization of Multilayer Hexagonal Graphene Grown by Ambient Pressure Chemical Vapor Deposition

Abstract

Chemical vapor deposition (CVD) is favorable for the growth of high-quality graphene on copper surfaces. Here, we employed CVD to synthesize large-grain (up to 70 µm), crystalline graphene with a controlled grain morphology. Graphene was characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and atomic force microscopy (AFM). The influence of methane (CH₄ and hydrogen (H₂) concentrations were evaluated during the CVD graphene growth.

Keywords:

• Hexagonal graphene
• Chemical vapor deposition
• Thin film growth
• Electropolishing
• Copper annealing

Funding

The authors would like to acknowledge King Abdulaziz City for Science and Technology for funding this work.