Electrostatically Doped Schottky barrier tunnel field effect transistor

ABSTRACT

This work reports a novel steep switching device architecture, electrosatically doped asymmetric schottky barrier tunnel field effect transistor (ED-SB-TFET) investigated by calibrated exhaustive 2D TCAD device simulation. This work deploys the concept of work-function engineering of the drain electrode along with the PtSi 5 source. The tactical use of a spacer along with the incorporation of high-K gate dielectrics enabled improvised switching ratio as well as sub-threshold slope (SS) reduction. The proposed ED-SB-TFET demonstrates a substantial reduction in the ambipolar current (I_amb), steeper SS, magnificent boost in drive current and higher scalability. This concept of electrostatic doping in schottky junction device facilitates easy fabrication technology as it does not need ion implantation/diffusion to realise the ultra-sharp source/drain doping profile. Further, the reported structure offers extreme resilience for random dopant fluctuations (RDFs), process variations, doping control issues, and bulk trap-assisted tunnelling (TAT) induced degradation. In addition to this, the analog and RF performance parameters have also been investigated. Our study establishes ED-SB-TFET as a promising candidate for low power futuristic switching applications.

KEYWORDS:

• Schottky barrier tunnel FET (SB-TFET) ambipolar current sub-threshold slope (SS) random dopant fluctuations (RDFs) trap assisted tunnelling (TAT)

Disclosure statement

No potential conflict of interest was reported by the author(s).