Abstract
Solid liquid interdiffusion technique is employed to attach N type Bi2(Te0·92Se0·08)3 thermoelectric material to alumina substrate. The surface finishes of the bonding surfaces for Bi2(Te0·92Se0·08)3 and alumina are Ni and Ag respectively. The bonding layer is pure Sn. The growth kinetic of intermetallic compounds and their microstructure evolution during aging at 200°C was established. The success of this bonding technique provides a cost effective way to assemble thermoelectric modules at a low temperature for higher temperature applications.
This work is financially supported by National Science Council of Taiwan through grant NSC101-2221-E-002-162-MY3, National Taiwan University through Grant 10R80920-04, and Industrial Technology Research Institute of Electronics and Optoelectronics Research Laboratories.