Assembly of N type Bi₂(Te, Se)₃ thermoelectric modules by low temperature bonding

References

• Snyder GJ: ‘Application of the compatibility factor to the design of segmented and cascaded thermoelectric generators’, Appl. Phys. Lett., 2004, 84, 2436–2438.
   Web of Science ®Google Scholar
• Dresselhaus MS, Chen G, Tang M, Yang R, Lee H, Wang DZ, Ren ZF, Fleurial JP, Gogna P: ‘New directions for low-dimensional thermoelectric materials’, Adv. Mater., 2007, 19, 1043–1053.
   Web of Science ®Google Scholar
• Snyder GJ, Toberer ES: ‘Complex thermoelectric materials’, Nat. Mater., 2008, 7, 105–114.
   PubMed Web of Science ®Google Scholar
• Gan YX, Sweetman J, Lawrence JG: ‘Electrodeposition and morphology analysis of Bi–Te thermoelectric alloy nanoparticles on copper substrate’, Mater. Lett., 2010, 64, 449–542.
   Google Scholar
• Su L, Gan YX, Zhang L: ‘Thermoelectricity of nanocomposites containing TiO2–CoO coaxial nanocables’, Scr. Mater., 2011, 64, 745–748.
   Google Scholar
• Madhavaram R, Sander J, Gan YX, Masiulaniec CK: ‘Thermoelectric property of PbTe coating on copper and nickel’, Mater. Chem. Phys., 2009, 118, 165–173.
   Google Scholar
• Min G, Rowe DM: ‘Cooling performance of integrated thermoelectric microcooler’, Solid State Electron., 1999, 43, 923–929.
   Google Scholar
• Liao CN, Lee CH, Chen WJ: ‘Effect of interfacial compound formation on contact resistivity of soldered junctions between bismuth telluride-based thermoelements and copper’, Electrochem. Solid-State Lett., 2007, 10, 23–25.
   Google Scholar
• Liao CN, Huang YC: ‘Effect of Ag addition in Sn on growth of SnTe compound during reaction between molten solder and tellurium’, J. Mater. Res., 2010, 25, 391–395.
   Google Scholar
• Liao CN, Lee CH: ‘Suppression of vigorous liquid Sn/Te reactions by Sn–Cu solder alloys’, J. Mater. Res., 2008, 23, 3303–3308.
   Web of Science ®Google Scholar
• Liao CN, Wu HN, Chen PC, Yeh JW: ‘Effect of antimony doping on thermoelectric properties of Zr0·5Ti0·5NiSn multi-element alloys’, Ann. Chim., 2006, 31, 711–722.
   Google Scholar
• Gan YX, Dynys FW: ‘Joining highly conductive and oxidation resistant silver-based electrode materials to silicon for high temperature thermoelectric energy conversions’, Mater. Chem. Phys., 2012, 138, 342–349.
   Google Scholar
• Kisiel R, Szczepanski Z: ‘Die-attachment solutions for SiC power devices’, Microelectron. Reliab., 2009, 49, 627–629.
   Google Scholar
• El-Genk MS, Saber HH, Caillat T: ‘Efficient segmented thermoelectric unicouples for space power applications’, Energy Convers. Manag., 2003, 44, 1755–1772.
   Web of Science ®Google Scholar
• Singh A, Bhattacharya S, Thinaharan C, Aswal DK, Gupta SK, Yakhmi JV, Bhanumurthy K: ‘Development of low resistance electrical contacts for thermoelectric devices based on n-type PbTe and p-type TAGS-85 ((AgSbTe2)0·15(GeTe)0·85)’, J. Phys. D: Appl. Phys., 2009, 42, 015502.
   Google Scholar
• Wojciechowski KT, Zybala R, Mania R: ‘High temperature CoSb3–Cu junctions’, Microelectron. Reliab., 2011, 51, 1198–1202.
   Google Scholar
• Shirzadi AA, Assadi H, Wallach ER: ‘Interface evolution and bond strength when diffusion bonding materials with stable oxide films’, Surf. Interf. Anal., 2011, 31, 609–618.
   Google Scholar
• Zhao DG, Li XY, Jiang W, Chen LD: ‘Interfacial evolution behavior and reliability evaluation of CoSb3/Ti/Mo-Cu thermoelectric joints during accelerated thermal aging’, J. Alloy. Compd, 2009, 477, 425–431.
   Google Scholar
• Chuang HY, Yang TL, Kuo MS, Chen YJ, Yu JJ, Li CC, Kao CR: ‘Critical concerns in soldering reactions arising from space confinement in 3-D IC packages’, IEEE Trans. Device Mater. Rel., 2012, 12, 233–240.
   Google Scholar
• Munding A, Hubner H, Kaiser A, Penka S, Benkart P, Kohn E:‘Cu/Sn solid–liquid interdiffusion bonding’ in ‘Wafer level 3-D ICs process technology’(, Tan C S, et al..), 131–169; 2008, New York, Springer.
   Google Scholar
• Lin WP, Wang PJ, Lee CC: ‘Bonding/barrier layers on bismuth telluride (Bi2Te3) for high temperature applications’, Proc. 60th Int. Conf. on ‘Electronic Components and Technology’, Las Vegas, USA, June 2010, Paris Las Vegas, 447– 450.
   Google Scholar
• Chuang HY, Yu JJ, Kuo MS, Tong HM, Kao CR: ‘Elimination of voids in reactions between Ni and Sn: a novel effect of silver’, Scr. Mater., 2012, 66, 171–174.
   Google Scholar
• Chen CM, Chen SW: ‘Electromigration effect upon the Sn/Ag and Sn/Ni interfacial reactions at various temperatures’, Acta Mater., 2002, 50, 2461–2469.
   Google Scholar
• Suzuki K, Kano S, Kajihara M, Kurokawa N, Sakamoto K: ‘Reactive Diffusion between Ag and Sn at Solid State Temperatures’, Mater. Trans., 2005, 46, 969–973.
   Google Scholar