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Advances in Applied Ceramics
Structural, Functional and Bioceramics
Volume 115, 2016 - Issue 1
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Short Communication

Influence of passivation pretreatment in common acid and alkali on oxidation behaviour of Ti3SiC2 at 500°C

L. JingNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China;School of Materials Science and Engineering, Tianjin Chengjian University, Tianjin300384, China
,
E. LeiSchool of Materials Science and Engineering, Tianjin Chengjian University, Tianjin300384, ChinaCorrespondence[email protected]
,
X. ZhouNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
,
Q. YeNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
,
J. ZhouNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
,
D. ZhaoNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
,
S. DuNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
,
J. LeeSchool of Materials Science and Engineering, Yeungnam University, Gyeongsan300384, Korea
,
Y.-H. HanSchool of Materials Science and Engineering, Yeungnam University, Gyeongsan300384, Korea
&
Q. HuangNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, ChinaCorrespondence[email protected]
 show all
Pages 60-64 | Published online: 09 Feb 2016
 
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Abstract

Passivation treatments in NaOH, H2SO4 and HCl were conducted in order to improve the oxidation resistance of Ti3SiC2 at 500°C. The oxidation resistance of Ti3SiC2 passivated in NaOH was the greatest of any treatments due to the formation of an amorphous film during passivation treatment, which became dense, crystalline and seemingly highly protective during oxidation. The detrimental phase transformation of TiO2 was limited by doping with SiO2. Different levels of corrosion happened during passivation treatment in H2SO4 and HCl, which is harmful to oxidation resistance.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (grant no. 91226202).

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