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IX. Microstructure, defects and processing-thin films

Preparation and electrical properties of sol-gel derived antiferroelectric Pb0.99[(Zr0.6Sn0.4)0.96Ti0.04]0.98Nb0.02O3: Thin films

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Pages 193-200 | Received 24 Aug 1998, Accepted 09 Sep 1998, Published online: 09 Mar 2011

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