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International Journal of Electronics Volume 111, 2024 - Issue 9
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Research Articles

Effects of metal work function and gate-oxide dielectric on super high frequency performance of a non-align junction DG-MOSFET based inverter in the sub-100 nm regime: a TCAD simulation analysis

Banoth Vasu NaikSchool of Electronics Engineering, VIT-AP University, Andhra Pradesh, India
&
Arun Kumar SinhaSchool of Electronics Engineering, VIT-AP University, Andhra Pradesh, IndiaCorrespondence[email protected]
ORCID Iconhttps://orcid.org/0000-0002-9043-6339
ORCID Icon
Pages 1441-1458 | Received 28 Feb 2023, Accepted 02 Oct 2023, Published online: 19 Nov 2023

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