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IETE Journal of Research Volume 31, 1985 - Issue 1
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Original Articles

Effect of Impurity Charge Bumps on the DC and Microwave Properties of High Efficiency Silicon Double Drift Impatt Diodes

S.P. PatiCentre of Advanced Study in Radiophysics & Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta700 009View further author information
,
J.P. BanerjeeCentre of Advanced Study in Radiophysics & Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta700 009View further author information
&
S.K. RoyCentre of Advanced Study in Radiophysics & Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta700 009View further author information
Pages 22-27 | Received 06 Jan 1984, Published online: 02 Jun 2015

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