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Integrated Ferroelectrics
An International Journal
Volume 27, 1999 - Issue 1-4
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Section M: Device integration issues

Direct wafer bonding and layer transfer for ferroelectric thin film integration

M. Alexe Max Planck Institute of Microstructure Physics, D-06120, Halle/Saale, Germany
,
St. Senz Max Planck Institute of Microstructure Physics, D-06120, Halle/Saale, Germany
,
A. Pignolet Max Planck Institute of Microstructure Physics, D-06120, Halle/Saale, Germany
,
D. Hesse Max Planck Institute of Microstructure Physics, D-06120, Halle/Saale, Germany
&
U. Gösele Max Planck Institute of Microstructure Physics, D-06120, Halle/Saale, Germany
Pages 205-211 | Received 07 Mar 1999, Published online: 19 Aug 2006

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