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Journal of Experimental Nanoscience Volume 3, 2008 - Issue 4
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Focus section on NSTI Nanotech Conference, 2007

A study on the electrical properties of plasma nitrided oxide gate dielectric in flash memory

Mincheol Park Semiconductor R & D Center, Samsung Electronics Co., Ltd., Hwasung-City, Gyunggi-Do, KoreaCorrespondence[email protected]
,
Seungchul Lee Semiconductor R & D Center, Samsung Electronics Co., Ltd., Hwasung-City, Gyunggi-Do, Korea
,
Keonsoo Kim Semiconductor R & D Center, Samsung Electronics Co., Ltd., Hwasung-City, Gyunggi-Do, Korea
&
Kangdeog Suh Semiconductor R & D Center, Samsung Electronics Co., Ltd., Hwasung-City, Gyunggi-Do, Korea
Pages 357-363 | Received 19 Oct 2007, Accepted 20 Dec 2007, Published online: 07 Jan 2009

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