Materials Research Letters
Volume 9, 2021 - Issue 2
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Original Reports
Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma
Clint D. FryeLawrence Livermore National Laboratory, Livermore, CA, USACorrespondence[email protected]
https://orcid.org/0000-0002-6370-8167View further author information
, https://orcid.org/0000-0002-6370-8167View further author information
Scott B. DonaldLawrence Livermore National Laboratory, Livermore, CA, USAView further author information
, Catherine E. ReinhardtLawrence Livermore National Laboratory, Livermore, CA, USAView further author information
, Rebecca J. NikolicLawrence Livermore National Laboratory, Livermore, CA, USAView further author information
, Lars F. VossLawrence Livermore National Laboratory, Livermore, CA, USAView further author information
& Sara E. HarrisonLawrence Livermore National Laboratory, Livermore, CA, USAView further author information
Pages 105-111
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Received 30 Jul 2020, Published online: 24 Nov 2020
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