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Research Article

Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Cui YuNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaCorrespondence[email protected] [email protected]
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Chuangjie ZhouNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaView further author information

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Jianchao GuoNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaView further author information

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Zezhao HeNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaView further author information

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Mengyu MaNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaView further author information

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Hao YuNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaView further author information

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Xubo SongNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaView further author information

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Aimin BuNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaView further author information

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Zhihong FengNational Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, ChinaCorrespondence[email protected] [email protected]
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