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Science and Technology of Advanced Materials: Methods Volume 4, 2024 - Issue 1
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Methodology, Apparatus, Experimental Design

Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method

Keito Mori-Tamamuraa Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanCorrespondence[email protected]
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Yuchi Takahashia Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanView further author information
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Shigeta Sakaia Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanView further author information
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Yuya Morimotoa Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanView further author information
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Junji Hiramaa Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanView further author information
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Atsushi A. Yamaguchia Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi-shi, JapanView further author information
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Susumu Kusanagib Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, JapanView further author information
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Yuya Kanitanib Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, JapanView further author information
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Yoshihiro Kudob Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, JapanView further author information
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Shigetaka Tomiyab Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi-shi, Japan;c Division of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma-shi, JapanView further author information
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Article: 2315027 | Received 09 Aug 2023, Accepted 01 Feb 2024, Published online: 14 Feb 2024

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