Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves

Isabelle BisottoLNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, F-38042Grenoble cedex 9, France

Ethirajulu S KannanLNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, F-38042Grenoble cedex 9, France;Department of Physics, BITS-Pilani, K K Birla, Goa Campus, Zuarinagar, Goa-403726, India

Jean-Claude PortalLNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, F-38042Grenoble cedex 9, France;Institut Universitaire de France and Institut National des Sciences Appliquées, Toulouse, F-31077 cedex 4, France

Devin BrownMicroelectronics Research Center, Georgia Institute of Technology, 791 Atlantic Drive NW, Atlanta, Georgia30322, USA

Thomas J BeckMicroelectronics Research Center, Georgia Institute of Technology, 791 Atlantic Drive NW, Atlanta, Georgia30322, USA

Yuriy KrupkoLNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, F-38042Grenoble cedex 9, France

Laurent JalabertLIMMS-CNRS-IIS, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo153-8505, Japan

Hiroyuki FujitaCIRMM-IIS, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo153-8505, Japan

Yusuke HoshiAdvanced Research Laboratory, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, 158-0082Tokyo, Japan

Yasuhiro ShirakiAdvanced Research Laboratory, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, 158-0082Tokyo, Japan

Takura SarayaIIS, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo153-8505, Japan

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Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves

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Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves

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