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Original Articles

Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO3 Thin Films Prepared by a Diol-Based Sol-Gel Method

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Pages 151-154 | Received 01 Aug 2003, Accepted 01 Jan 2004, Published online: 07 Sep 2010

References

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  • Kao , M. C. , Lee , M. S. , Wang , C. M. , Chen , H. Z. and Chen , Y. C. 2002 . Properties of LiTaO3 thin film derived by a diol-based sol-gel process . Jpn. J. Appl. Phys. , 41 : 2982 – 2986 .
  • Hesto , P. , Barvotlin , G. and Vapaille , A. 1986 . Instabilities in Silicon Devices , Amsterdam : North-Holland .
  • Sze , S. M. 1981 . Physics of Semiconductor Devices , New York : Wiley .

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