Dielectric and Ferroelectric Behaviors of (100)-Oriented 0.9Pb(Sc_0.5Ta_0.5)O₃-0.1PbTiO₃ Thin Films

References

• J. F. Scott, “Applications of modern ferroelectrics,” Science, vol. 315, no. 5814, pp. 954–959, February 16, 2007 (2007).
   PubMed Web of Science ®Google Scholar
• N. Setter, D. Damjanovic, L. Eng et al., “Ferroelectric thin films: Review of materials, properties, and applications,” Journal of Applied Physics, vol. 100, no. 5, pp. 051606 Sep, (2006).
   Web of Science ®Google Scholar
• N. M. Shorrocks, R. W. Whatmore, and P. C. Osbond, “Lead scandium tantalate for thermal detector applications,” Ferroelectrics, vol. 106, no. 1, pp. 387–392, 1990/06/01, (1990).
   Web of Science ®Google Scholar
• X. Li, S.-G. Lu, X.-Z. Chen et al., “Pyroelectric and electrocaloric materials,” Journal of Materials Chemistry C, vol. 1, no. 1, pp. 23–37, (2013).
   Web of Science ®Google Scholar
• J. R. Giniewicz, A. S. Bhalla, and L. E. Cross, “Identification of the morphotropic phase boundary in the lead scandium tantalate lead titanate solid solution system,” Journal of Materials Science, vol. 32, no. 9, pp. 2249–2253, May, (1997).
   Web of Science ®Google Scholar
• H. Liu, J. F. Wang, J. Y. Wang et al., “Dielectric and piezoelectric properties of lanthanum-modified 0.55Pb(Sc1/2Ta1/2)O3–0.45PbTiO3 ceramics,” Journal of The European Ceramic Society, vol. 20, no. 14–15, pp. 2337–2346 (2000).
   Web of Science ®Google Scholar
• X. D. Zhang, X. J. Meng, J. L. Sun et al., “Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing,” Thin Solid Films, vol. 516, no. 6, pp. 919–924 Jan, (2008).
   Web of Science ®Google Scholar
• C. K. Xie, J. I. Budnick, W. A. Hines et al., “Strain-induced change in local structure and its effect on the ferromagnetic properties of La0.5Sr0.5CoO3 thin films,” Applied Physics Letters, vol. 93, no. 18 Nov, (2008).
   Web of Science ®Google Scholar
• Y. S. Hu, Y. G. Guo, R. Dominko et al., “Improved electrode performance of porous LiFePO4 using RuO2 as an oxidic nanoscale interconnect,” Advanced Materials, vol. 19, no. 15, pp. 1963−+, Aug, (2007).
   Web of Science ®Google Scholar
• J. Lee, L. Johnson, A. Safari et al., “Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors,” Applied Physics Letters, vol. 63, no. 1, pp. 27–29 (1993).
   Web of Science ®Google Scholar
• F. Chen, Q. Z. Liu, H. F. Wang et al., “Polarization switching and fatigue in Pb(Zr0.52Ti0.48)O3 films sandwiched by oxide electrodes with different carrier types,” Applied Physics Letters, vol. 90, no. 19 May, (2007).
   Web of Science ®Google Scholar
• X. J. Lou, “Polarization fatigue in ferroelectric thin films and related materials,” Journal of Applied Physics, vol. 105, no. 2 Jan, (2009).
   Web of Science ®Google Scholar
• X. Li, Y. Sun, H. Liu et al., “Influence of annealing process on crystalline,microstructure, and ferroelectric properties of PSTT5 thin films,” Ferroelectrics, vol. 384, no. 1, pp. 160–165, 2009/06/25 (2009).
   Web of Science ®Google Scholar
• Y. C. Sun, X. D. Li, Y. Y. Zhou et al., “Effect of Two-Steps RTA on the Properties of PSTT5 Thin Films,” in ISAF 2009: 18th IEEE International Symposium on the Applications of Ferroelectrics, Xi'an, pp. 210–213 (2009).
   Google Scholar
• X. Li, H. Guo, H. Liu et al., “Effect of different annealing methods on ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films,” Applied Surface Science, vol. 257, no. 15, pp. 6756–6760, 5/15/ (2011).
   Web of Science ®Google Scholar
• X. D. Li, Q. Chen, Y. C. Sun et al., “Preparation and charaterization of high (100) oriented PSTT5 thin flims by RF sputtering technology,” in ISAF 2009: 18th IEEE International Symposium on the Applications of Ferroelectrics, Xi'an,, pp. 214–216 (2009).
   Google Scholar
• Y. Pu, J. Zhu, X. Zhu et al., “Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52, Ti0.48)O3 seed layer,” Ceramics International, vol. 38, Supplement 1, no. 0, pp. S233–S236, 1// (2012).
   Web of Science ®Google Scholar
• L. Hong, G. Xiao-Gang, Z. Zhen-Ning et al., “Ferroelectric and domain properties of 0.55Pb(Sc1/2Ta1/2)O3−0.45PbTiO3 thin films,” Ferroelectrics, vol. 357, pp. 259–263 Jan., 2007.
   Web of Science ®Google Scholar
• A. Chopra, D. Pantel, Y. Kim et al., “Microstructure and ferroelectric properties of epitaxial cation ordered PbSc0.5Ta0.5O3 thin films grown on electroded and buffered Si(100),” Journal of Applied Physics, vol. 114, no. 8, 084107 (2013).
   Web of Science ®Google Scholar
• A. Chopra, B. I. Birajdar, Y. Kim et al., “Epitaxial, cation-ordered, ferroelectric PbSc0.5Ta0.5O3 thin films prepared by pulsed laser deposition,” Applied Physics Letters, vol. 95, no. 2, 0922907 (2009).
   Web of Science ®Google Scholar
• M. Dawber, K. M. Rabe, and J. F. Scott, “Physics of thin-film ferroelectric oxides,” Reviews of Modern Physics, vol. 77, no. 4, pp. 1083–1130, 10/17/ (2005).
   Web of Science ®Google Scholar
• P. M. Raj, B. W. Lee, D. Balaraman et al., “Leakage current analysis of hydrothermal BaTiO3 thin films,” Journal of Electroceramics, vol. 27, no. 3–4, pp. 169–175 Dec, (2011).
   Web of Science ®Google Scholar
• J. G. Wu, J. Wang, D. Q. Xiao et al., “Leakage mechanism of cation-modified BiFeO3 thin film,” Aip Advances, vol. 1, no. 2 Jun, (2011).
   Google Scholar
• I. Stolichnov, A. K. Tagantsev, E. L. Colla et al., “Cold-field-emission test of the fatigued state of Pb(ZrxTi1−x)O3films,” Applied Physics Letters, vol. 73, no. 10, pp. 1361–1363 (1998).
   Web of Science ®Google Scholar
• J. D. Baniecki, R. B. Laibowitz, T. M. Shaw et al., “Hydrogen induced tunnel emission in Pt/(BaxSr1−x)Ti1+yO3+z/Pt thin film capacitors,” Journal of Applied Physics, vol. 89, no. 5, pp. 2873–2885 Mar, (2001).
   Web of Science ®Google Scholar
• T. Kuroiwa, T. Honda, H. Watarai et al., “Electric properties of SrTiO3 thin-films prepared by RF-sputtering,” Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 31, no. 9B, pp. 3025–3028 Sep, (1992).
   Web of Science ®Google Scholar
• S. K. Sahoo, D. Misra, D. C. Agrawal et al., “Leakage mechanism of Ba0.8Sr0.2TiO3/ZrO2 multilayer thin films,” Journal of Applied Physics, vol. 108, no. 7, pp. – (2010).
   Web of Science ®Google Scholar
• Stolichnov, I., and Tagantsev,A., Space-charge influenced-injection model for conduction in Pb(ZrxTi1−x)O3 thin films,” Journal of Applied Physics, vol. 84, no. 6, pp. 3216–3225, (1998).
   Web of Science ®Google Scholar
• J. C. Bae, S. S. Kim, E. K. Choi et al., “Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol–gel method,” Thin Solid Films, vol. 472, no. 1–2, pp. 90–95 (2005).
   Web of Science ®Google Scholar
• Cross, L. E., Relaxor ferroelectrics: an overview,” Ferroelectrics, vol. 151, no. 1–4, pp. 305–20 (1994) 1994.
   Google Scholar
• A. A. Bokov, and Z. G. Ye, “Recent progress in relaxor ferroelectrics with perovskite structure,” Journal of Materials Science, vol. 41, no. 1, pp. 31–52 Jan, (2006).
   Web of Science ®Google Scholar
• C.-R. Cho, W.-J. Lee, B.-G. Yu et al., “Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film,” Journal of Applied Physics, vol. 86, no. 5, pp. 2700–2711 (1999).
   Web of Science ®Google Scholar
• Taylor, D. V., and Damjanovic, D., Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fields,” Journal of Applied Physics, vol. 82, no. 4, pp. 1973–1975 (1997).
   Web of Science ®Google Scholar
• Damjanovic, D., Logarithmic frequency dependence of the piezoelectric effect due to pinning of ferroelectric-ferroelastic domain walls,” Physical Review B, vol. 55, no. 2, pp. R649–R652 (1997).
   Web of Science ®Google Scholar