A study of on-resistance and switching characteristics of the power MOSFET under cryogenic conditions

References

• Baliga , B. J. 1996 . Power Semiconductor Devices , 349 Boston : PWS Publishing Company .
   Google Scholar
• Fox , R. M. and Jaeger , R. C. 1987 . MOSFET behavior and circuit considerations for analog applications at 77K . IEEE Transactions on Electron Devices , 34 : 114 – 123 .
   Google Scholar
• Grant , D. A. and Gowar , J. 1989 . Power MOSFETs, Theory and Applications , 17 New York : Wiley .
   Google Scholar
• Mueller , O. 1989 . On resistance, thermal resistance and reverse recovery time of power MOSFETs at 77K . Cryogenics , 29 : 1006 – 1014 .
   Google Scholar
• Mueller , O. 1990 . Switching losses of the cryogenic MOSFETs and SIT . Cryogenics , 30 : 1094 – 1100 .
   Google Scholar
• Mueller , O. Properties of higher power cryo-MOSFETs . Proceedings of the 1996 IEEE Industrial Applications Conference . Piscataway, N.J.. pp. 1443 – 1448 . IEEE .
   Google Scholar
• Mueller , O. and Herd , K. G. Ultra high efficiency power conversion using cryogenic MOSFETs and HT superconductors . Proceedings of the 24th IEEE Power Electronics Specialists Conference . Piscataway, N.J.. pp. 772 – 778 . IEEE .
   Google Scholar
• Shenai , K. Performance potential of low voltage power MOSFETs in liquid nitrogen cooled power systems . IEEE Transactions on Electron Devices , 38 934 – 936 .
   Google Scholar
• Singh , R. and Baliga , B. J. 1993 . Analysis and optimization of power MOSFETs for cryogenic operations . Solid State Electronics , 36 : 1203 – 1211 .
   Google Scholar
• Uyemura , J. P. 1988 . Fundamentals of MOS Digital Integrated Circuits , 203 New York : Addison Wesley .
   Google Scholar