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Research Article

A low-power SRAM design with enhanced stability and ION/IOFF ratio in FinFET technology for wearable device applications

Erfan Abbasiana Faculty of Electrical and Computer Engineering, Babol Noshirvani University of Technology, Babol, IranCorrespondence[email protected]
ORCID Iconhttps://orcid.org/0000-0003-0073-8737View further author information
ORCID Icon,
Shilpi Birlab Department of Electronics & Communication Engineering, Manipal University Jaipur, Jaipur, IndiaORCID Iconhttps://orcid.org/0000-0002-4239-4912View further author information
ORCID Icon,
Ashish Sachdevac Chitkara University Institute of Engineering and Technology, Chitkara University, Punjab, IndiaORCID Iconhttps://orcid.org/0000-0003-2434-5073View further author information
ORCID Icon &
Elangovan Manid Department of Electronics and Communication Engineering, Government College of Engineering, Srirangam, IndiaORCID Iconhttps://orcid.org/0000-0002-6318-0286View further author information
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Received 30 Nov 2022, Accepted 12 Jun 2023, Published online: 25 Jul 2023

References

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