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Research Article

Improved SOI-MESFET structures for enhanced efficiency and optimized DC/RF characteristics

, ORCID Icon & ORCID Icon
Received 21 Oct 2022, Accepted 17 Sep 2023, Published online: 16 Oct 2023

References

  • Abdi, A., & Naderi, A. (2022). A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region. Materials Science and Engineering: B, 283, 115839‏. https://doi.org/10.1016/j.mseb.2022.115839
  • Anvarifard, M. K. (2016). Increase in the scattering of electric field lines in a new high voltage SOI MESFET. Superlattices and Microstructures, 97, 15–27. https://doi.org/10.1016/j.spmi.2016.06.005
  • Anvarifard, M. K. (2018). An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET). Journal of Computational Electronics, 17(1), 230–237. https://doi.org/10.1007/s10825-017-1078-4
  • Atlas, D. S. (2005). Atlas User’s manual, Silvaco International Software. Santa Clara.
  • Cao, J. G. (1996). A simplified 2-D analytic model for the threshold-voltage of fully depleted short gate-length si-SOI MESFET’s. IEEE Transactions on Electron Devices, 43(8), 1314–1315.‏.
  • El-Nabulsi, R. A. (2021). Quantum dynamics in low-dimensional systems with position-dependent mass and product-like fractal geometry. Physical E, Low-Dimensional Systems & Nanostructures, 134(1), 114827. https://doi.org/10.1016/j.physe.2021.114827
  • Ervin, J., Balijepalli, A., Joshi, P., Kushner, V., Yang, J., & Thornton, T. J. (2006). CMOS-compatible SOI MESFETs with high breakdown voltage. IEEE Transactions on Electron Devices, 53(12), 3129–3135. https://doi.org/10.1109/TED.2006.885530
  • Khanjar, S., & Naderi, A. (2021). DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric si wells. Materials Science and Engineering: B, 272(12), 115386‏. https://doi.org/10.1109/TED.2006.885530
  • Khoorabeh, M., Orouji, A. A., & Madadi, D. (2021). Improvement of a novel SOI-MESFET with an embedded GaN layer for high-frequency operations. Silicon, 14(1) , 2757–2764. https://doi.org/10.1007/s12633-021-01063-x
  • Kononchuk, O., & Nguyen, B.-Y. (2014). Silicon-on-insulator (soi) technology: Manufacture and applications. Elsevier.
  • Mahrous, H., FedawyM, E., & FikryW, S. (2019). GadM(2019)Design of a 90 GHz SOI fin electro-optic modulator for high-speed applications. Applied Sciences, 9(22), 4917. https://doi.org/10.3390/app9224917
  • Mohtaram, M. (2021). Physical analysis on the DC and RF Operations of a novel SOI-MESFET with protruded gate and dual wells. Silicon, 14(1), 3911–3917. https://doi.org/10.1007/s12633-021-01174-5
  • Mohtaram, M., & Asghar Orouji, A. (2020). A novel SOI MESFET to spread the potential contours towards the drain. International Journal of Electronics, 107(9), 1506–1523.
  • Mohtaram, M., Orouji, A. A., & Ramezani, Z. (2019). A novel SOI MESFET to improve the equipotential contour distributions by using an oxide barrier. Silicon, 11(2), 879–889.‏.
  • Naderi, A., & Mohammadi, H. (2021). Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance. The European Physical Journal Plus, 136(6), 662.
  • Naderi, A., Satari, K. M., & Heirani, F. (2018). SOI-MESFET with a layer of metal in buried oxide and a layer of SiO2 in channel to improve RF and breakdown characteristics. Materials Science in Semiconductor Processing, 88, 57–64. https://doi.org/10.1016/j.mssp.2018.07.035
  • Pierret, R. F., & Neudeck, G. W. (1987). Advanced semiconductor fundamentals (Vol. 6). Addison-Wesley.
  • Sina, M., Orouji, A. A., & Ramezani, Z. (2021). Achieving a considerable output power density in SOI MESFETs using silicon dioxide Engineering. Silicon, 14(1), 6689–6696. https://doi.org/10.1007/s12633-021-01414-8
  • Singh, J. (2007). Semiconductor devices: Basic principles. John Wiley & Sons.
  • Spann, J. (2005). Total dose radiation response of CMOS compatible SOI MESFETs. IEEE Transactions on Nuclear Science, 52(6), 2398–2402.‏.
  • Streetman, B. G., & Banerjee, S. (2000). Solid state electronic devices (Vol. 4). Prentice hall.
  • Sze, S. M. (2008). Semiconductor devices: Physics and technology. John wiley & sons.
  • Zhang, W., Li, L., QiaoM, Z., Z, C. S., Zhang, S., He, B., Luo, X., Li, Z., & Zhang, B. (2019). Novel high voltage ultra-thin SOI-LDMOS with sectional linearly doped drift region. IEEE Electron Device Letters, 40(7), 1151–1154. https://doi.org/10.1109/LED.2019.2919074

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