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Radiation Effects Volume 77, 1983 - Issue 1-2
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Original Articles

Channeled ion implantation of as+ in silicon at 300°c

G. N. Galkin P. N. Lebedev Physical Institute, Moscow, 117924, USS
,
V. A. Dravin P. N. Lebedev Physical Institute, Moscow, 117924, USS
,
M. S. Epifanov P. N. Lebedev Physical Institute, Moscow, 117924, USS
,
Z. M. Khamdokhov P. N. Lebedev Physical Institute, Moscow, 117924, USS
&
V. S. Kulikauskas Institute of Nuclear Physics, Moscow State University, Moscow, 117234, USSR
Pages 57-66 | Published online: 19 Aug 2006

References

  • Mayer , J. W. , Eriksson , L. and Davis , J. A. 1970 . Ion Implantation in Semiconductors , 60 New York : Academic Press .
  • Morehead , F. F. and Crowder , B. L. 1970 . Rad. Effects , 6 : 27
  • Kleinfelder , W. J. , Johnson , W. S. and Gibbons , J. F. 1968 . Can. J. Phys. , 46 : 597
  • Burenkov , A. F. , Komarov , F. F. , Kumakhov , M. A. and Temkin , M. M. 1980 . Tables of Spatial Distribution Parameters of Ion-Implanted Impurities Minsk
  • Bormot , O. V. 1982 . XI Vsesoyuznoye soveschanije po fizike vzaimodejstvija zaryajennykh tchastitz s krystallami, Proc. 174 Moscow
  • Kumakhov , M. A. 1970 . “ Voprossy teorii ionnogo legirovaniya ” . In Preprint of Inst of Nucl. Phys. , Moscow St. University .
  • Bogh , E. , Hogild , H. and Stensgaard , I. 1971 . Rad. Effects , 7 : 115
  • Kulikauskas , V. S. , Galkin , G. N. and Khamdokhov , Z. M. 1982 . XI Vsesoyuznoye soveschanije po fizike vzaimodejstvija zaryajennykh tchastitz s krystallami, Proceedings 536 Moscow
  • Smirnov , L. S. , ed. 1980 . Voprosy radiatzionnoj technologii poluprovodnikov , 31 Novosibirsk : Nauka .
  • Lindhard , J. 1965 . Influence of Crystal Lattice on Motion of Energetic Changed Particles . Mat.-Fys. Medd. Dan. Vid. Selsk. , 34 : 14

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