References
- Akkers EP, van Dam JA, De Franceschi S, et al. Epitaxial growth of InP nanowires on germanium. Nat Mater. 2004;3:769–773.
- Liu H, Wang T, Jiang Q, et al. Long wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nat Photonics. 2011;5:416–419.
- Bhargava N, Coppinger M, Prakash Gupta J, et al. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy. Appl Phys Lett. 2013;103:041908.
- Zhao YS, Liu D, Chen J, et al. Engineering the thermal conductivity along an individual silicon nanowire by selective helium ion irradiation. Nat Commun. 2017;8:15919.
- Xie GF, Li BH, Yang LW, et al. Ultralow thermal conductivity in Si/GexSi1−xcore-shell nanowires. J Appl Phys. 2013;113:083501.
- Mooney PM. Strain relaxation and dislocations in SiGe/Si structures. Mater Sci Eng. 1996;17:105–146.
- LeGoues FK, Mooney PM, Terso J. Measurement of the activation barrier to nucleation of dislocations in thin films. Phys Rev Lett. 1993;71:396–399.
- Faleev N, Sustersic N, Bhargava N, et al. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II. transmission electron mi- croscopy and atomic force microscopy. J Cryst Growth. 2013;365:35–43.
- Chen X, Zuo D, Kim S, et al. Large Area and Depth-Pro.ling dislocation Imaging and Strain analysis in Si/SiGe/Si heterostructures. Microsc Microanal. 2014;20:1521–1527.
- Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, et al. Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy. J Appl Phys. 2004;96:7665–7674.
- Eaglesham DJ, Cerullo M. Low-temperature growth of Ge on Si(100). Appl Phys Lett. 1991;58:2276–2278.
- Bauer M, Lyutovich K, Oehme M, et al. Relaxed SiGe buffers with thicknesses below 0.1 μm. Thin Solid Films. 2000;369:152–156.
- Tompkins HG, Irene EA. Handbook of ellipsometry. Berlin: Springer-Verlag GmbH; 2005.
- Neumann H, Horing W, Reccius E. Growth and optical properties of CuGaTe2 thin films. Thin Solid Films. 1979;61:13–22.
- Vandewal K, Tvingstedt K, Gadisa A, et al. On the origin of the open-circuit voltage of polymer-fullerene solar cells. Nat Mater. 2009;8:904–909.
- Shockley W. The Theory of p-n junctions in semiconductors and p-n junction transistors. Bell Syst Tech J. 1949;28:435–489.
- Waldauf C, Scharber MC, Schilinsky P, et al. Physics of organic bulk heterojunction devices for photovoltaic applications. J Appl Phys. 2006;99:104503.
- Zang Z, Nakamura A, Temmyo J. Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application. Opt Express. 2013;21:11448–11456.
- Zang Z, Nakamura A, Temmyo J. Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature. Mater Lett. 2013;92:188–191.
- Foertig A, Rauh J, Dyakonov V, et al. Shockley equation parameters of P3HT:PCBMsolar cells determined by transient techniques. Phys Rev B. 2012;86:115302.
- Poelman D, Smet PF. Methods for the determination of the optical constants of thin films from single transmission measurements: a critical review. J Phys D: Appl Phys. 2003;36:1850–1857.
- Lin H, Huang CP, Li W, et al. Size dependency of nanocrystalline TiO2 on its optical property and photocatalytic reactivity exemplified by 2-chlorophenol. Appl Catal B: Environ. 2006;68:1–11.
- Simmons EL. Diffuse reflectance spectroscopy: a comparison of the theories. Appl Opt. 1975;14:1380–1386.
- Burgeth G, Kisch H. Photocatalytic and photoelectrochemical properties of titania chloroplatinate (IV). Coord Chem Rev. 2002;230:41–47.
- Gullapalli SK, Vemuri RS, Ramana CV. Structural transformation induced changes in the optical properties of nanocrystalline tungsten oxide thin films. Appl Phys Lett. 2010;96(1–3):171903.
- Kumar SS, Rubio EJ, Noor-A-Alam M, et al. Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films. J Phys Chem C. 2013;117:4194–4200.
- Vemuri RS, Engelhard MH, Ramana CV. Correlation between surface chemistry, density, and band gap in nanocrystalline WO3 thin films. ACS Appl Mater Interfaces. 2012;4:1371–1377.
- Shum K, Mooney PM, Chu JO. Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si. Appl Phys Lett. 1997;71:1074–1076. doi:10.1063/1.119732 .
- Derin H, Kantarl K, Yıldız M, et al. Optical properties of SixGe1−x single crystals grown by liquid phase diffusion. J Mater Sci Semicond Process. 2009;12:146–150.
- Kadri E, Krichen M, Arab AB. Analytical method for the analysis of thin SiGe/Si solar cells with front surface field. Opt Quantum Electron. 2016;48:305.
- Messaoudi O, Ben assaker I, Gannouni M, et al. Structural, morphological and electrical characteristics of electrodeposited Cu2O: effect of deposition time. Appl Surf Sci. 2016;366:383–388.