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Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method

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References

  • Al Tahtamouni, T. M., X. Du, J. Li, J. Lin, and H. Jiang. 2015. Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition. Optical Materials Express 5 (2):274–80.
  • Chaudhari, G. N., V. R. Chinchamalatpure, and S. A. Ghosh. 2011. Structural and electrical characterization of GaN thin films on Si 100. American Journal of Analytical Chemistry 2 (8):984.
  • Cui, Z., X. Ke, E. Li, and T. Liu. 2016. Electronic and optical properties of titanium-doped GaN nanowires. Materials and Design 96:409–415.
  • Ekem, N., S. Korkmaz, S. Pat, M. Z. Balbag, N. E. Cetin, M. Ozmumcu, R. Vladoiu, G. Musa. 2008. ZnO thin film preparation using RF sputtering at various oxygen contents. Journal of Optoelectronics and Advanced Materials 10 (12):3279–82.
  • Elnagar, K., T. Abou Elmaaty, and S. Raouf. 2014. Dyeing of polyester and polyamide synthetic fabrics with natural dyes using ecofriendly technique. Journal of Textiles 2014:1–8.
  • Fernández, S., A. Martínez-Steele, J. J. Gandía, and F. B. Naranjo. 2009. Radio frequency sputter deposition of high-quality conductive and transparent ZnO: Al films on polymer substrates for thin film solar cells applications. Thin Solid Films 517 (10):3152–56.
  • Gasser, S. M., E. Kolawa, and M. A. Nicolet. 1999. Reaction of aluminum-on-titanium bilayer with GaN: Influence of the Al: Ti atomic ratio. Journal of Electronic Materials 28 (8):949–54.
  • Jeon, H. C., T. W. Kang, T. W. Kim, J. Kang, and K. J. Chang. 2005. Enhancement of the magnetic properties in (Ga1 −x Mnx) N thin films due to Mn-delta doping. Applied Physics Letters 87 (9):092501.
  • Jimenez, G. C., C. O. López, and M. J. Espitia. 2016. Electronic structure and the half-metallic ferromagnetic behavior of the ti-doped bn system studied using first-principles (Estructura electrónica y comportamiento semimetálico y ferromagnético del sistema bn dopado con ti estudiado usando primeros principios). Revista Latinoamericana de Metalurgia y Materiales 36 (2):185–91.
  • Lee, D. S., and A. J. Steckl. 2001. Room-temperature-grown rare-earth-doped GaN luminescent thin films. Applied Physics Letters 79 (13):1962–64.
  • Lee, J. H., I. H. Choi, S. Shin, S. Lee, J. Lee, C. Whang, S. C. Lee, K. R. Lee, J. H. Baek, K. H. Chae. 2007. Room-temperature ferromagnetism of Cu-implanted GaN. Applied Physics Letters 90 (3):032504.
  • Lei, D., T. Yang, B. Qu, J. Ma, Q. Li, L. Chen, and T. Wang. 2014. Synthesis of TiN@C nanocomposites for enhanced electrochemical properties. Sustainable Energy 2 (1):1–4.
  • Leung, K. C. F., and Y. X. J. Wang. 2010. Mn–Fe nanowires towards cell labeling and magnetic resonance imaging. Croatia: INTECH Open Access Publisher.
  • Madhu, C., A. Sundaresan, and C. N. R. Rao. 2008. Room-temperature ferromagnetism in undoped GaN and CdS semiconductor nanoparticles. Physical Review B 77 (20):201306.
  • Maeda, M., T. Yamasaki, and Y. Takahashi. 2012. Ohmic contact mechanism of titanium-based electrodes on n-type gallium nitride. Transactions of JWRI 41 (1):45–48.
  • Mahadevan, P., and S. Mahalakshmi. 2006. Suitability of p-type conditions for ferromagnetism in GaN: Mn. Physical Review B 73 (15):153201.
  • Majid, A., M. Javed, U. A. Rana, and S. U. D. Khan. 2015. Ti Ga–VN complexes in GaN: A new prospect of carrier mediated ferromagnetism. RSC Advances 5 (106):87437–44.
  • Manna, S., and S. K. De. 2011. Understanding the room temperature ferromagnetism in GaN nanowires with Pd doping. Journal of Physics: Conference Series, IOP Publishing, vol. 292, no. 1, 012013.
  • Min, Z., and Jun-Jie, S. 2013. Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes. Chinese Physics B 23 (1):017301.
  • Özen, S., V. Şenay, S. Pat, and Ş. Korkmaz. (2015a). Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA). Journal of Materials Science: Materials in Electronics 26 (7):5060–64.
  • Özen, S., V. Şenay, S. Pat, and Ş. Korkmaz. (2015b). Investigation on the morphology and surface free energy of the AlGaN thin film. Journal of Alloys and Compounds 653:162–67.
  • Özen, S., V. Şenay, S. Pat, and Ş. Korkmaz. (2015c). The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc. Scanning 38 (1):14–20.
  • Pat, S., M. Z. Balbağ, and Ş. Korkmaz. 2014. Mechanical properties of deposited carbon thin films on sapphire substrates using atomic force microscopy (AFM). Ceramics International 40 (7):10159–62.
  • Pat, S., Ş. Korkmaz, S. Özen, and V. Şenay. 2015. GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA). Materials Chemistry and Physics 159:1–5.
  • Ranchal, R., B. S. Yadav, and A. Trampert. 2013. Ferromagnetism at room temperature of c-and m-plane GaN: Gd films grown on different substrates by reactive molecular beam epitaxy. Journal of Physics D: Applied Physics 46 (7):075003.
  • Rufinus, J. 2007. Magnetic properties of M-doped (M =Ti, V, or Cr) GaN clusters. Journal of Magnetism and Magnetic Materials 310 (2):1666–68.
  • Sato, H., T. Minami, E. Yamada, M. Ishii, and S. Takata. 1994. Transparent and conductive impurity‐doped GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method. Journal of Applied Physics 75 (3):1405–09.
  • Saoula, N., K. Henda, and R. Kesri. 2009. Influence of nitrogen content on the structural and mechanical properties of tin thin films.
  • Seo, S. S. A., M. W. Kim, Y. S. Lee, T. W. Noh, Y. D. Park, G. T. Thaler, M. E. Overberg, C. R. Abernathy, and S. J. Pearton. 2003. Observation of sphere resonance peak in ferromagnetic GaN: Mn. Applied Physics Letters 82 (26):4749–51.
  • Shen, K. C., M. C. Jiang, H. R. Liu, H. H. Hsueh, Y. C. Kao, R. H. Horng, and D. S. Wuu. 2013. Pulsed laser deposition of hexagonal GaN-on-Si (100) template for MOCVD applications. Optics Express 21 (22):26468–74.
  • Shi, F. 2011. GaN nanowires fabricated by magnetron sputtering deposition. Croatia: INTECH Open Access Publisher.
  • Suggisetti, P., D. Banerjee, R. Adari, N. Pande, T. Patil, S. Ganguly, and D. Saha. 2013. Room temperature ferromagnetism in thermally diffused Cr in GaN. AIP Advances 3 (3):032143.
  • Xiong, Z. H., and F. Y. Jiang. 2007. First-principles study of electronic structure and ferromagnetism in Ti-doped ZnO. Journal of Physics and Chemistry of Solids 68 (8):1500–03.
  • Xiong, Z., S. Shi, and F. Jiang. 2007. Ti in GaN: Ordering ferromagnetically from first-principles study. Chemical Physics Letters 443 (1):92–94.
  • Xue, S., X. Zhang, R. Huang, H. Zhuang, and C. Xue. 2008. Defect-pit-assisted growth of GaN nanostructures: Nanowires, nanorods and nanobelts. Dalton Transactions 32:4296–302.
  • Wang, Q., Q. Sun, and P. Jena. 2005. Ferromagnetism in Mn-doped GaN nanowires. Physical Review Letters 95 (16):167202.
  • Wang, Z., C. Zhang, J. Li, F. Gao, and W. J. Weber. 2010. First-principles study of electronic properties of gallium nitride nanowires grown along different crystal directions. Computational Materials Science 50 (2):344–48.

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