REFERENCES
- Pritchard, R. L., “Frequency variation of junction transistor parameter”, Proc. I.R.E., May 1954.
- Gartner, W. W., Hanel, R., Schampt, R. & Coruso, F., “Current amplification factor, a junction transistor as a function of emitter current and junction temperature”, Proc. I.R.E. (Nov. 1958), 1875; “Temperature dependence of junction transistor parameters”, Proc. I.R.E., May 1957.
- Deb, S. & Daw, A. N., “Determination of physical parameters and geometry of junction transistor”, Proc. I.E.E. March 1960.
- Evans, D., “Measurements on alloy junction germanium transistor and their relation to theory”, J. Electronics, March 1956.
- Burges, R. E., “Emitter base impedance of junction transistors”, J. Electronics (Nov. 1956), 301.
- Early, J. M., “Effect of space charge layer widening in junction transistors”, Proc. I.R.E., Nov. 1952.
- Giacoletto., L. J., “Study of p-n-p alloy junction transistor from d.c. through medium frequencies”, R.C.A. Review, Dec. 1954.
- Ryder, R. M., “Transistor technology”, Bell. Lab Series
- Hunter, L. P., “Hand-book of semiconductors electronics”, McGraw-Hill.
- Gartner, W. W., “Transistors, principles and design and applications” Van nostrand series.
- Phillips, A. B., “Transistor engineering” (McGraw-Hill).
- Long, D., “Low injection level behaviour and base width measurement in junction transistors”, J. appl. Phys., Oct. 1957.
- Lind Mayer, J. & Wrighley, C. “Cut-off frequency of junction transistors”, Proc. I.R.E., 1962.