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IETE Journal of Research Volume 26, 1980 - Issue 2
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Original Articles

Physical and Electrical Properties of rf Plasma Grown Al2O3 and ain Insulators on Silicon

A.B. BhattacharyaCentre for Applied Research in Electronics, Indian Institute of Technology, New Delhi110 029.View further author information
,
Sudhir ChandraCentre for Applied Research in Electronics, Indian Institute of Technology, New Delhi110 029.View further author information
&
D. NagchoudhuriCentre for Applied Research in Electronics, Indian Institute of Technology, New Delhi110 029.View further author information
Pages 110-116 | Published online: 11 Jul 2015

REFERENCES

  • Zaininger (K H) & Waxman (A S). Radiation Resistance of Al2O3 MOS Devices. IEEE Trans. ED-16, 4; 1969; 333–338.
  • Waxman (A) & Zaininger (K H). Al3O3—Silicon Insulated Gate Field Effect Transistors. Appl. Phys. Lett. 12, 3; 1968; 109–110.
  • Tanaka (T) & Iwauchi (S). The Characteristic of Al-Al3O3—Si Structure Formed by Reactive Sputtering. Japanese J. Appl. Phys. 7, 1968; 1420.
  • Nagano (K), Iwauchi (S) & Tanaka (T). Al2O3—Silicon MOS Field Effect Transistors. Ibid. 8, 2; 1969; 277.
  • Salama (C A T). RF Sputtered Aluminium Oxide Films on Silicon. J. Electrochem. Soc. 117, 7; 1970; 913–917.
  • Salama (C A T). Conduction in Al2O3 Films and Charge Storage in MAOS Structures. Ibid. 118, 12; 1971; 1993–1999.
  • Aboaf (J A). Deposition and Properties of Aluminium Oxide Obtained by Pyrolytic Decomposition of an Aluminium Alkoxide. Ibid. 114, 9; 1967; 948–952.
  • Tsujide (T), Nakanuma (S) & Ikushima (Y). Properties of Aluminium Oxide Obtained by Hydrolysis of AICI3. Ibid. 117, 5; 1970; 703–708.
  • Katto (H) & Koga (Y). Preparation & Properties of Aluminium Oxide Films Obtained by Glow Discharge Technique. Ibid. 118, 10; 1971; 1619–1623.
  • Conti (M) & Vanin (A). Oxide and Nitride Conduction Mechanisms in MNOS Structures. Thin Solid Films. 14, 1972; 211–220.
  • Chu (T L) & Kelm Jr. (R W). The Preparation and Properties of Aluminium Nitride Films. J. Electrochem. Soc. 122, 7; 1975; 995–1000.
  • Zirinsky(S) & Irene (E A). Selective Studies of Chemical Vapour- Deposited Aluminium Nitride-Silicon Nitride Mixtrue Films. Ibid. 125, 2; 1978; 305–314.
  • Uemura (Y), Tanaka (K) & Iwata (M). Some Properties of Thin Aluminium Nitride Films Formed in a Glow Discharge. Thin Solid Films. 20, 1974; 11–16.
  • Clemens (J T), Labuda (E F) & Berglund (C N). Aluminium Oxide/Silicon Dioxide, Double-Insulator, MOS Structure. BSTJ 54, 4; 1975; 687–719.
  • Balk (P) & Stephany (F). Charge Injection in MAOS Systems. J. Electrochem. Soc. 118, 10; 1971; 1634–1638.
  • Kampshoff (H), Stephany (F) & Balk (P). Conduction and Charging Behaviour in MA(O)S-Systems. Ibid. 124, 11; 1977; 1761–1766.
  • Walden (R H). A Method for the Determination of High-Field Conduction Laws in Insulating Films in the Presence of Charge Trapping. J. Appl. Phys. 43, 3; 1972; 1178–1186.
  • Declerck (G J), Hattori (T), May (G A), Beaudouin (J) & Meindl (J D). Some Effects of Trichloroethylene Oxidation on the Characteristics of MOS Devices. J. Electrochem. Soc. 122, 3; 1975; 436–439.
  • Nakagiri (M) & Wada (T). Electrical Characteristics of Metal- Al2O3—SiO2—Si (MAOS) Transistors. Japanese J. Appl. Phys. 11, 10; 1972; 1484–1490.

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