REFERENCES
- Grove (A S), Deal (BE), Snow (E H) & Sah (C T). Investigation of Thermally Oxidized Silicon Surfaces Using Metal-Oxide-Semiconductor. Structures Solid State Electron. 8, 2; 1965; 145.
- Rai (B P), Singh (Keshaw) & Srivastava (R S). Frequency Dependence of MOS Devices under Illumination. J. Inst. Electron & Telecom. Engrs. 21, 10; 1975; 535.
- Grosvalet (J) & Jund (C). Influence of Illumination on MIS Capacitance in the Strong Inversion Region. IEEE Trans. ED-14, 11; 1967; 777.
- Hofstein (S R) & Warfield (G). Physical Limitation on the Frequency Response of a Semiconductor Surface Inversion Layer. Solid State Electron. 8, 3; 1965; 321.
- Zaininger (K H) & Warfield (G). Limitations of the MOS Capacitance Method for the Determination of Semiconductor Surface Properties. IEEE Trans. ED-12, 4; 1965; 179.