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Original Articles

Secondary Breakdown in Bipolar Transistors

, MIETE & , FIETE
Pages 97-103 | Received 20 Jun 1983, Published online: 02 Jun 2015

REFERENCES

  • H.A. Schafft & J.C. French, A survey of second breakdown, IEEE Trans, vol ED-13, p 613, 1966.
  • F. Bergman & D. Gerstner, Some aspects of thermal instability of current distribution in power transistors, ibid., vol ED-13, p 630, 1966.
  • H. Melchoir & M. J. O. Strutt, Secondary breakdown in transistors, Proc IEEE, vol 52, p 439, 1964.
  • A.C. English, Mesoplasma and second breakdown in Si p-n junctions, Solid-State Electronics, vol 6, p 511, 1963.
  • A.C. English, Physical investigation of meso plasma in silicon, IEEE Trans, vol ED-13, p 662, 1966.
  • W.B. Smith, D.H. Potius & P.P. Buddensteen, Second breakdown and damage in junction devices, IEEE Trans, vol ED-20 p 731, 1973.
  • B.A. Beatty, S. Krishna & M.S. Adler, Second breakdown in power transistors due to avalanche injection, ibid., vol ED-23, p 851, 1976.
  • P.L. Hower & V.G.K. Reddi, Avalanche injection and second breakdown in transistors, ibid., vol 17, p 320, 1970.
  • M.J. Zarabi & M. Satyam, Some investigations on secondary breakdown in p-n junctions considering the effect of thermally generated carriers, Solid-State Electronics, vol 20, p 407, 1977.
  • S. Rubin & F.F. Oettinger, Thermal hysteresis and its possible effect in restricting the hot spot free operating range of some power transistors, ibid., vol 18, p 393, 1971.

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