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Original Articles

Chemical Vapour Deposition of Tungsten by the Reduction of WF6 using Si, SiH4, Si2H6, Si3H8, B2H6, PH3, and H2

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Pages 212-219 | Published online: 02 Jun 2015

REFERENCES

  • S Blewer, Ed, Tungsten and other refractory metals for VLSI Applications, Materials Research Society, Pittsburgh, Pennsylvania, 1985.
  • J M Shaw & J A Amick, Vapor-deposited tungsteft as a metallization and interconnection materials for silicon devices, RCA Review, vol 31, p 306, 1970.
  • T Moriya, S Shima, Y Hazuki, M Chiba & M Kashiwagi, A planar metallization process—Its application to tri-level aluminium interconnection, IEEE IEDM Tech Dig, pp 550–553, 1983.
  • N E Miller & I Beinglass, CVD tungsten interconnect and contact barrier technology for VLSI, Solid State Technol, vol 23, p 85–90, 1982.
  • E K Broadbent & C L Ramiller, Selective low pressure CVD of tungsten, J Electrochem Soc, vol 131, p 1427–1434, 1984.
  • T Ohba, S Inoue & M Maeda, Selective CVD tungsten silicide for VLSI applications, IEEE IEDM Tech Dig, p 213–216, 1987.
  • H Kotani, T Tsutsumi, J Komori & S Nagao, A highly reliable selective CVD-W utilizing SiH4 reduction for VLSI contacts, IEEE IEDM Tech Dig, p 217–220, 1987.
  • T Ohba & K Wada, Selective chemical vapor deposition of tungsten utilizing WF6-Sin H2n+2, reaction system, 1st Micro- process Conf Dig, Tokyo, p 122–123, Dec 1988.
  • T Ohba, T Suzuki, T Hara, Y Furumura & K Wada, Selective chemical vapor deposition of tungsten using silence and poly-silane reductions, in Tungsten and Other Refractory Metals for VLSI Applications IV, (Eds R S Blewer & C M McConica), Materials Research Society, Pittsburgh, Pennyslvania, 1988, p 17–25.
  • T Ohba, T Suzuki, S Inoue, M Maeda & K Wada, Selective deposition and electrical properties for selective CVD of tungsten and tungsten silicide, 1st Symp Proc of Jpn ECS, Tokyo, pp 60–65, 1988 (in Japanese).
  • H Itoh, Reaction kinetics of selective W-CVD, 1st Symp Proc of Jpn ECS, Tokyo, p 54–59, 1988 (in Japanese).
  • A Miller & G D Barnett, Chemical vapor deposition of tungsten at low pressure, J Electrochem Soc, vol 109, pp 973–976, 1962.
  • P Petroff, T T Sheng, A K Sinha, G A Rozgonyi, & F B Alexander, Microstructure, growth, resistivity and stress in thin tungsten films deposited by sputtering, J Appl Phys, vol 44, pp 2545–2554, 1973.
  • D C Paine, J C Bravman & C Y Yang, Metastable β-tungsten in LPCVD Contacts to Silicon, in Tungsten and Other Refractory Metals for VLSI Applications III, (Ed V A Walls), Materials Research Society, Pittsburgh, Pennsylvania, p 95–101, 1987.
  • JANAF Thermochemical Tables: (a) 2nd ed NSRDS-NBS-37 (1971), (b) 1974 Supplement, (c) 1975 Supplement.
  • J E C Schmitz, A J M van Dijk & M W M Graef, Comparison of Step Coverage and Other Aspects of the H2/WF6 and SiH4/WF6 Reduction Schemes used in Blanket LPCVD of Tungsten, in Proc 10 th Int Conf on CVD, (Ed G W Cullen), Electrochem Soc, NJ, vol 87–8, p 625–635, 1987.
  • W A P Claassen, J Bloem, W G J N Valkenburg, & C H J van den Brekel, The deposition of silicon from silane in a low-pressure hot-wall system, J Crystal Growth, vol 57, pp 259–266, 1982.
  • M E Coltrin, R J Kee & J A Miller, Mathematical model of the coupled fluid mechanics and chemicals kinetics in a chemical vapor deposition reactor, J Electrochemical Soc, vol 131, pp 425–434, 1984.
  • D R Bradbury & T I Kamins, Effects of insulator surface on selective deposition of CVD tungsten films, J Electrochem Soc, vol 133, pp 1214–1217, 1986.
  • T Ohba, Y Ohyama, S Inoue & M Maeda, Evaluation on selective deposition of CVD W films by measurement of Surface temperature, in Tungsten and Other Refractory Metals for VLSI Applications II, (Ed E K Broadbent), Materials Research Society, Pittsburgh, Pennsylvania, 1986, p 59–66.

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