REFERENCES
- A Hoffmann & Frank Rose, Die wirungsweise von Cd-Se-zwischenschichten in Selengleichrichtern, Zeitschrift fur physik, bd, 136, pp 152–165, 1953.
- C H Champness, Fabrication and characteristics of Te-Se-Cd structures. Physics of Selenium and Tellurium' E Gerlac & P Grosse, (eds), Springer-Verlac, Berlin, pp 246–255, 1979.
- Masao Tomura, On the electrical formation of Selenium rectifier, J Physics Soc Japan, vol 5, pp 222–227, 1950.
- E A Richardson, Metal Rectifier Engineering, Pitman, London, 1958.
- Marcus H Norwood & Ephraim Shatz, Voltage variable capacitor tuning: A review, Proc IEEE, vol 56, pp 788–798, 1968.
- R A Moline & G F Foxhall, Ion implanted hyperabrupt junction voltage variable capacitors, IEEE Trans Electron Devices, vol ED-19, pp 267–273, Feb 1972.
- Walter C Johnson & Peter T Panousis, The influence of debye length on the C-V measurement on doping profiles, IEEE Trans Electron Devices, vol ED-18, pp 965–973, Oct 1971.
- M S Tyagi, Introduction to semiconductor materials and devices, John Wiley and Sons Inc, 1991.
- S M Sze, Physics of semiconductor devices. Second Edition, Wiley Eastern Ltd, July 1991.
- V T Ingole & A A Ghatol, Effect of electrical forming on the charge impurity distribution of Selenium Cadmium diode (Unpublished).