Compound Semiconductor Photodetectors: A Review

REFERENCES

• A Kumar, D Pal & D N Bose, LPE growth of InGaAs with rare earth gettering, characterization and DLTS studies, J Electron Matter, vol 24, p 833, 1995.
   Web of Science ®Google Scholar
• D Pal & D N Bose, Deep Level Transient Spectroscopy study in gettered LPE grown In 0.53 Gao0.47 As, J Appl Phys, vol 77, p 210, 1995.
   Web of Science ®Google Scholar
• A Kumar & D N Bose, InGaAs Photodiodes for fiber-optic communication, Sadhana, vol 17, p 210, 1992.
   Web of Science ®Google Scholar
• T P Pearsall & M A Pollack, in Semiconductors and Semimetals, W T Tsang (ed), vol 22, p 173, Academic Press Inc, New York, 1985.
   Google Scholar
• T P Pearsall, in Properties of Lattice Matched and Strained InGaAs, Pallab Bhattacharya (Ed), IISPEC, London, UK, p 267, 1993.
   Google Scholar
• D N Bose, in Perspectives in Optoelectronics, S S Jha (ed), World Scientific Publishing Pvt Ltd, Singapore, p 299, 1995.
   Google Scholar
• R Kuchibotla & J Campbell, SPIC Inter Symp on Optics, Imaging and Instrumentation, SPIE Proc, vol 2022, 1993.
   Google Scholar
• I Hsing Tan, E L Hu, J E Bowers & B I Miller, Modelling and performance of wafer-fused resonant cavity enhanced photodiodes, IEEE J Quantum Electron, vol 31, p 602, 1995.
   Google Scholar
• H Temkin, A Antreasyan, N A Olsson, T P Pearsall & J C Bean, Ge0.6Si0.4 rib wave guide avalance photodiodes for 1.3 micron operation, Appl Phys Lett, vol 49, p 809, 1986.
   Web of Science ®Google Scholar
• A Srinivasan, S Murtza, J C Campbell & B G Streetman, High quantum efficiency dual wavelength resonant cavity photodetectors, Appl Phys Lett, vol 66, p 535, 1995.
   Web of Science ®Google Scholar
• M Ito & O Wada, Low dark current GaAs Metal- Semiconductor-Metal (MSM) photodiodes using WSit contacts, J Quantum Electronics, vol QE-22, p 1073, 1986.
   Web of Science ®Google Scholar
• K Kajiyama, Y Mizusima & S Sakata, Schottky barrier height of n-InxGa1–xAs diodes, Appl Phys Lett, vol 23, p 458, 1973.
   Web of Science ®Google Scholar
• L Yang, A S Sudbo, R A Logan, T Tanbun & W T Sang, IEEE Photonics Technology Lett, vol 1, p 5658, 1990.
   Google Scholar
• J Soole, H Schumacher, H P Leblanc, R Bhat & M Koza, IEEE Photonics Technology Lett, vol 1, p 250, 1989.
   Google Scholar
• J Soole, H Schumacher, H P Leblanc, R Bhat & M Koza, An investigation of opto-electronic response of GaAs/InGaAs MSM Photodiodes, IEEE Electron Device Lett, vol 9, p 607, 1988.
   Web of Science ®Google Scholar
• W P Hang, G K Chang & R Bhat, High performance Al0.15Ga0.85As/In0.53Ga0.53As MSM photodiodes grown by OMCVD, IEEE Trans Electron Device, vol ED-36, p 659, 1989.
   Web of Science ®Google Scholar
• S V Avernis, A Kohl, P Mullar & M Kusters, Proc Inter Symp on GaAs and related compounds (Karuizawa), pp 839–847, 1992.
   Google Scholar
• J I Chyi, T S Wei, J W Hong, W Lin & Y K Yu, Low dark current and high linearty InGaAs MSM photodetector, Electron Lett, vol 3, p 355, 1994.
   Web of Science ®Google Scholar
• J Burm, K I Liivin, D W Woodward, W J Schooff, P Mancleville, M A Jaspan, M M Gilin & L F Eastman, High frequency, high efficiency photodiodes. J Quantum Electronics, vol 31, p 1504, 1995.
   Web of Science ®Google Scholar
• F Salam Ali & K F Brennd, Theoretical Study of response of MSM photodiodes, IEEE J Quantum Electron, vol 31, p 944, 1995.
   Web of Science ®Google Scholar
• J P Hermannis, F Roders, E Slein Von Kamienski, H G Roskos, H Kurz, H Holerichear, C Buchai & S Mantle, Vertical silicon MSM photodiodes, Appl Phys Lett, vol 66, p 866, 1995.
   Web of Science ®Google Scholar
• B F Levine, Quantum well infrared photodetectors, J Appl Phys, vol 74 (R1), p 219, 1993.
   Google Scholar
• M D Manasreh, in Semiconductor Quantum Well and Superlattices for Long Wavelength Infrared Photodetectors, Boston, Artech House, 1993.
   Google Scholar
• B F Levine, C G Bethea, G Hasnain, V O Sneh, E Pelve, R R Abbott & S J Hsien, High sensitivity low dark current 10 micron GaAs quantum well infrared photodetectors. Appl Phys Utt, vol 56, p 851, 1990.
   Web of Science ®Google Scholar
• R P G Karunastrri, J S Park & K L Wang, Si1–xGex/Si multiple quantum well infrared detectors, Appl Phys Lett, vol 59, p 2588, 1991.
   Web of Science ®Google Scholar
• B V Tasur, C K Chen & S A Marino, Long wavelength GexSi1–x/Si heterojunction infrared detectors and 400×400 element imager arrays, IEEE Electron Device Lett, vol EDL-12, p 293, 1991.
   Web of Science ®Google Scholar
• D J Robbins, M B Stanway, W Y Leony, R T Cavlene & N T Gudon, Absorption in p-SixGe1–x quantum well detectors. Appl Phys Lett, vol 66, p 1512, 1995.
   Web of Science ®Google Scholar
• J D Kim, S Kim, D Wu, J Wojkowski, J Xu, J Pitrowski, E Bigan & M Razeghi, 8–13 micron InAsSb heterojunction photodiode operating near room temperature, Appl Phys Lett, vol 678, p 2645, 1995.
   Web of Science ®Google Scholar
• R G Lang, J P Backer & J E Mahan, IR detection with ReSi2 thin film photoregister, Appl Phys Lett, vol 66, p 875, 1995.
   Web of Science ®Google Scholar