REFERENCES
- International Technology Roadmap For Semiconductors, Process Integration, Devices, and Structures, pp 34, 2005.
- Paolo Pavan, Roberto Bez, Piero Olivo & Enrico Zanoni, Flash Memory cells—An Overview, Proceedings of the IEEE, vol 85, no 8, pp 1248–1271, August 1997.
- Roberto Bez, Emilio Camerlenghi, Alberto Modelli & Angelo Visconti, Introduction to Flash Memory, Proceeding of the IEEE, vol 91, no 4, pp 489–502, April 2003.
- P Cappelletti, Flash Memory Reliability, Microelectronic Reliability, vol 38, no 2, pp 185–188, 1998.
- ML Green, E P Gusev, R Degraeve & E L Garfunkel, Ultra thin (<4nm) SiO2 and Si-O-N Gate Dielectric layers for Silicon microelectronics: Understanding the Processing, structure, and physical, and electrical limits, Journal of Applied Physics, vol 90, no 5, pp 2057–2121, September 2001.
- M M Moleshi & K C Saraswat, Thermal Nitridation of Si and SiO2 for VLSI, IEEE Trans Electron Dev, vol 32, pp 106–123, 1985.
- A T wu, T Y Chan, V Murali, S W Lee, J Nulman & M Garner, IEDM Tech Dig, pp 271–274, 1989.
- P Pan, Characteristics of Thermal SiO2 films during Nitridation, Journal of Applied Physics, vol 61, pp 284, 1986.
- T Hori, H Iwasaki & K Tsuji, Charge trapping properties of ultra thin nitrided oxides prepared by rapid thermal annealing, IEEE Trans Electron Dev, vol 35, pp 904, 1988.
- Hyunsang Hwang, Wenchi Ting, Dim Lee-Kwong, & Jack Lee, Electrical and Reliability characteristics of Ultrathin Oxynitride Gate Dielectric Prepared by Rapid Thermal Processing in N2O, IEDM Tech Dig, pp 421–424, 1990.
- K A Ellis & R A Burhman, Nitrous oxide (N2O) Processing for silicon oxynitride Gate dielectrics, IBM J Res. Develop, vol 43, pp 287–300, 1999.
- M Bhat, J Kim, J Yan, G W Yoon, L K Han & D L Kwong, MOS characteristics of Ultrathin NO-Grown Oxynitrides, IEEE Electron Device Letters, vol 15, no 10, pp 421–423, October 1994.
- M K Mazumder, A Teramoto, K Kobayashi, M Katsumata, Y Mashiko, M Sekine, H Koyama & A Yasuoka, Effect of N2O or NO annealing of wet oxide at different times on TDDB characteristics, in 96IRW Final Report, pp 125–133, 1997.
- Yi Jae-Young, Lee Yong-Hui, Szirmay-Kalos Laszlo & Yi Cheon-Hee, The Characteristics of Wet Gate Oxide Device and Nitride Oxide (NO) Device, in IEEE TENCON, 1999, pp 1136–1139.
- P T Lai, J P Xu & Y C Cheng, Interface Properties of NO- Annealed N2O—Grown Oxinitride, IEEE Trans Electron. Dev, vol 46, no 12, December 1999.
- Szu-Yu Wang, Chih-Yuan Chin, Pei-Ren Jeng, Ling-Wu Yang, Ming-Shiang Chen, Chi-Tung, Huang, Jeng Gong, Kuang-Chao Chen, Joseph Ku & Chih-Yuan Lu, Mechanisms and Solutions to Gate Oxide Degradation in Flash Memory by Tunnel -Oxide Nitridation engineering. IEEE Electron Device Letters, vol 26, pp 363–365, June 2005.
- L M Tennan, An investigation of surface states at a Silicon/Silicon dioxide interface employing metal-oxide-diodes. Solid-State Electronics, vol 5, pp 285–299, 1962.
- R B Abemethy, An overview of Weibull Analysis, chapter1 in the New Weibull Handbook, Florida, USA, 2002, http://www.barringerl.com/tnwhb.htm
- Piyas Samanta & Mansun Chan, Effects of Gate material on Fowler-Nordheim stress induced thin silicon dioxide degradation under negative gate bias, Journal of Applied Physics, vol 96, no 3, pp 1547–1555, August 2004.