References
- K. Hayat, A. Kashif, T. Mehmood, and M. Imran. “High performance gan hemt class-ab rf power amplifier for l-band applications,” 10th IBCAST, pp. 389–392, 2013.
- M. Iqbal, and A. Piacibello. “A 5w class-ab power amplifier based on a gan hemt for lte communication band,” MMS, pp. 1–4, 2016.
- W. A. Malik, A. A. Sheta, and I. Elshafiey, “Development of efficient high-power amplifier with more than an octave bandwidth,” IEEE Access, Vol. 6, pp. 6602–6609, March 9, 2008.
- A. Shukla, and K. Ray, “22-watts power amplifier design using gan hemt,” IEEE MAPCON, 1108–13, 2022.
- A. Shukla, and K. P. Ray. “Design and development of gallium nitride based power amplifier for radar applications,” M. Tech Dissertation, Dept. Elect. Eng., DIAT, Pune, India, May 2022.
- S. C. Cripps. Advanced Techniques in RF Power Amplifiers Design. Boston: Artech House Microwave Library, 2002.
- M. G. Sadeque, Z. Yusoff, M. Roslee, S. J. Hashim, and A. S. M. Marzuki, “Analysis and design of the biasing network for 1 ghz bandwidth rf power amplifier,” IJEECS, Vol. 24, no. 1, pp. 308–16, 2021.
- L. Esaki, and R. Tsu, “Superlattice and negative differential conductivity in semiconductors,” IBM J. Res. Dev., Vol. 14, no. 1, pp. 61–5, 1970.
- J. Rollett, “Stability and power-gain invariants of linear two ports,” IRE Trans. Circ. Theory, Vol. 9, no. 1, pp. 29–32, 1962.
- M. Edwards, and J. Sinsky, “A new criterion for linear 2-port stability using a single geometrically derived parameter,” IEEE Trans. Microw. Theory Tech., Vol. 40, no. 12, pp. 2303–11, 1992.
- Wolfspeed. “CGH40025, 25 W, RF power GaN HEMT,” CGH40025 datasheet, Rev 4.1-March 2020.
- F. M. Ghannouchi, and M. S. Hashmi. Load-pull techniques with applications to power amplifier design. Dordrecht: Springer, 2013.