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Original Articles

An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors

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Pages 179-183 | Received 01 Apr 2004, Accepted 01 Oct 2004, Published online: 06 Aug 2006

References

References

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  • Rahman , A and Lundstrom , MS . 2002 . A compact scattering model for the nanoscale double‐gate MOSFET . IEEE Trans. Electron Dev. , 49 : 481
  • Naveh , Y and Likharev , KK . 2000 . Modeling of 10‐nm‐scale ballistic MOSFETs . IEEE Electron Dev. Lett. , 21 : 242
  • Ferry DK Goodnick SM Tranport in Nanostructures, Cambridge University Press Cambridge 1997
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  • Munteanu , D and Autran , JL . 2003 . Two‐dimensional modeling of quantum ballistic transport in double‐gate SOI devices . Solid-State Electron. , 47 : 1219
  • Guo , J and Lundstrom , MS . 2002 . A computational study of thin body, double gate, Shottky barrier MOSFETs . IEEE Trans. Electron Dev. , 49 : 1897

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