References
- Bauer , E. and Poppa , H. 1972 . Recent advances in epitaxy. . Thin Solid Films , 12 : 167
- Venables , J. A. 1976 . Capabilities and limits of nucleation theories. . Thin Solid Films , 32 : 135 Nucleation calculations in a pair-binding model. Phys. Rev. B36, 4153 (1987)
- Black , J. E. and Bopp , P. 1986 . Orientation of small rafts of xenon atoms physisorbed on P: A molecular-dynamics study. . Phys. Rev. , B34 : 7410 (111)
- Schneider , M. , Rahman , A. and Schuller , I. K. 1985 . Role of relaxation in epitaxial growth: A molecular-dynamics study. . Phys. Rev. Lett. , 55 : 604
- Schneider , M. , Schuller , I. K. and Rahman , A. 1987 . Epitaxial growth of silicon: A molecular-dynamics simulation. . Phys. Rev. , B36 : 1340
- Sasajima , Y. , Nakagawa , S. , Miyamoto , E. and Imabayashi , M. 1990 . Computer simulation of relaxation process of deposited films. . J. Crystal Growth , 99 : 496
- Ozawa , S. and Sasajima , Y. 1990 . Computer experiments of initial growth kinetics of vacuum-deposited thin films. . Vacuum , 41 : 1109
- Grabow , M. H. and Gilmer , G. H. 1987 . Molecular dynamics studies of semiconductor thin films and interfaces. . Mater. Res. Soc. Sym. Proc. , 94 : 15